Conduction centers in a Ta2O5-δ Fermi glass

Ilan Goldfarb; R. Stanley Williams

doi:https://doi.org/10.1007/s00339-013-8162-9

Conduction centers in a Ta₂O_5-δ Fermi glass

Ilan Goldfarb, R. Stanley Williams

Department of Materials Science and Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

We compare our photoemission spectra with the calculated energy spectra of oxygen vacancies in Ta oxide to identify the defects responsible for the formation of a band in the gap of a Ta oxide-based memristor. We have previously explained transitions between high and low resistance states in a memristor conducting channel under bias reversal by accumulation and depletion of oxygen in the channel. Oxidation leads to a higher resistance due to sparser conduction centers for the electrons to hop between. Here, we show that they are likely due to neutral oxygen vacancies located at 'in-plane' sites of the Ta-O polyhedra.

Original language	English
Pages (from-to)	287-289
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	114
Issue number	2
DOIs	https://doi.org/10.1007/s00339-013-8162-9
State	Published - Feb 2014

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science

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https://doi.org/10.1007/s00339-013-8162-9

Cite this

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title = "Conduction centers in a Ta2O5-δ Fermi glass",

abstract = "We compare our photoemission spectra with the calculated energy spectra of oxygen vacancies in Ta oxide to identify the defects responsible for the formation of a band in the gap of a Ta oxide-based memristor. We have previously explained transitions between high and low resistance states in a memristor conducting channel under bias reversal by accumulation and depletion of oxygen in the channel. Oxidation leads to a higher resistance due to sparser conduction centers for the electrons to hop between. Here, we show that they are likely due to neutral oxygen vacancies located at 'in-plane' sites of the Ta-O polyhedra.",

author = "Ilan Goldfarb and Williams, {R. Stanley}",

note = "Funding Information: This research was supported in part by the SyNAPSE program of the Defense Advanced Research Projects Agency under contract HR0011-09-3-0001. The views, opinions, and/or findings contained in this article are those of the authors and should not be interpreted as representing the official views or policies, either expressed or implied, of the Defense Advanced Research Projects Agency or the Department of Defense. The authors gratefully acknowledge technical assistance of D. A. A. Ohlberg.",

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doi = "https://doi.org/10.1007/s00339-013-8162-9",

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AU - Goldfarb, Ilan

AU - Williams, R. Stanley

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PY - 2014/2

Y1 - 2014/2

N2 - We compare our photoemission spectra with the calculated energy spectra of oxygen vacancies in Ta oxide to identify the defects responsible for the formation of a band in the gap of a Ta oxide-based memristor. We have previously explained transitions between high and low resistance states in a memristor conducting channel under bias reversal by accumulation and depletion of oxygen in the channel. Oxidation leads to a higher resistance due to sparser conduction centers for the electrons to hop between. Here, we show that they are likely due to neutral oxygen vacancies located at 'in-plane' sites of the Ta-O polyhedra.

AB - We compare our photoemission spectra with the calculated energy spectra of oxygen vacancies in Ta oxide to identify the defects responsible for the formation of a band in the gap of a Ta oxide-based memristor. We have previously explained transitions between high and low resistance states in a memristor conducting channel under bias reversal by accumulation and depletion of oxygen in the channel. Oxidation leads to a higher resistance due to sparser conduction centers for the electrons to hop between. Here, we show that they are likely due to neutral oxygen vacancies located at 'in-plane' sites of the Ta-O polyhedra.

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DO - https://doi.org/10.1007/s00339-013-8162-9

M3 - مقالة

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EP - 289

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -

Conduction centers in a Ta₂O_5-δ Fermi glass

Abstract

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