Components of strong magnetoresistance in Mn implanted Ge

A. Simons, A. Gerber, I. Ya Korenblit, A. Suslov, B. Raquet, M. Passacantando, L. Ottaviano, G. Impellizzeri, B. Aronzon

Research output: Contribution to journalArticlepeer-review


Strong magnetoresistance reaching thousands of percent and non-monotonic field dependent Hall effect were measured in Mn implanted Ge samples in fields up to 60 T and analyzed in the framework of a two carriers model. The measured Hall effect and temperature dependent zero field resistance can be consistently described by parallel conductance along thick p-type Ge substrate with low concentration of highly mobile carriers and along thin Mn doped Ge layer with low mobility carriers. However, the same model is not sufficient to explain experimentally observed suppression of quadratic field dependence of magnetoresistance at low fields and absence of its saturation at high fields. Two additional mechanisms were identified: a strong quasi-linear magnetoresistance of Ge substrate that dominates the low field range and a non-saturating "3/2" power law magnetoresistance of the Mn doped Ge layer dominating the high field range.

Original languageEnglish
Article number093703
JournalJournal of Applied Physics
Issue number9
StatePublished - 7 Mar 2014

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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