Complementary inverter from patterned source electrode vertical organic field effect transistors

Michael Greenman; Svetlana Yoffis; Nir Tessler

doi:10.1063/1.4940999

Complementary inverter from patterned source electrode vertical organic field effect transistors

Michael Greenman, Svetlana Yoffis, Nir Tessler

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We report N-type and P-type high performance vertical organic field effect transistors. Insulation layer on top of the source electrode is used to reduce off currents leading to on/off ratio above 10⁵ with on current density higher than 10 mA/cm². A complementary inverter circuit was assembled from the transistors; examination of the inverter output characteristic indicates that the inverter gain is strong enough to be cascaded.

Original language	English
Article number	043301
Journal	Applied Physics Letters
Volume	108
Issue number	4
DOIs	https://doi.org/10.1063/1.4940999
State	Published - 25 Jan 2016

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4940999

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title = "Complementary inverter from patterned source electrode vertical organic field effect transistors",

abstract = "We report N-type and P-type high performance vertical organic field effect transistors. Insulation layer on top of the source electrode is used to reduce off currents leading to on/off ratio above 105 with on current density higher than 10 mA/cm2. A complementary inverter circuit was assembled from the transistors; examination of the inverter output characteristic indicates that the inverter gain is strong enough to be cascaded.",

author = "Michael Greenman and Svetlana Yoffis and Nir Tessler",

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N2 - We report N-type and P-type high performance vertical organic field effect transistors. Insulation layer on top of the source electrode is used to reduce off currents leading to on/off ratio above 105 with on current density higher than 10 mA/cm2. A complementary inverter circuit was assembled from the transistors; examination of the inverter output characteristic indicates that the inverter gain is strong enough to be cascaded.

AB - We report N-type and P-type high performance vertical organic field effect transistors. Insulation layer on top of the source electrode is used to reduce off currents leading to on/off ratio above 105 with on current density higher than 10 mA/cm2. A complementary inverter circuit was assembled from the transistors; examination of the inverter output characteristic indicates that the inverter gain is strong enough to be cascaded.

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JO - Applied Physics Letters

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Complementary inverter from patterned source electrode vertical organic field effect transistors

Abstract

All Science Journal Classification (ASJC) codes

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