Abstract
We present differential conductance measurements of cobalt/cobalt-oxide/ indium planar junctions, 500 nm × 500 nm in size. The junctions span a wide range of barriers, from very low to a tunnel barrier. The characteristic conductances of all the junctions show a V-shape structure at low bias instead of the U-shape characteristic of an s-wave order parameter. The bias of the conductance peaks is, for all junctions, larger than the gap of indium. Both properties exclude pure s-wave pairing. The data are well fitted by a model that assumes the coexistence of s-wave singlet and equal-spin p-wave triplet fluids. We find that the values of the s-wave and p-wave gaps follow the BCS temperature dependence and that the amplitude of the s-wave fluid increases with the barrier strength.
| Original language | English |
|---|---|
| Article number | 014532 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 84 |
| Issue number | 1 |
| DOIs | |
| State | Published - 11 Jul 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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