Coding for Write ℓ-step-up Memories

Yeow Meng Chee, Han Mao Kiah, A. J.Han Vinck, Van Khu Vu, Eitan Yaakobi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we propose and study a new class of non-binary rewriting codes, called write ℓ-step-up memories (WℓM) codes. From an information-theoretic point of view, this coding scheme is a generalization of non-binary write-once memories (WOM) codes. From a practical point of view, this coding scheme can be used not only to increase the lifetime of flash memories but also mitigate their over-shooting problem. We first provide an exact formula for the capacity region and the maximum sum-rate of WℓM codes. Lastly, we present several explicit constructions of high-rate WℓM codes with efficient encoding/decoding algorithms.

Original languageEnglish
Title of host publication2019 IEEE International Symposium on Information Theory, ISIT 2019 - Proceedings
Pages1597-1601
Number of pages5
ISBN (Electronic)9781538692912
DOIs
StatePublished - Jul 2019
Event2019 IEEE International Symposium on Information Theory, ISIT 2019 - Paris, France
Duration: 7 Jul 201912 Jul 2019

Publication series

NameIEEE International Symposium on Information Theory - Proceedings
Volume2019-July

Conference

Conference2019 IEEE International Symposium on Information Theory, ISIT 2019
Country/TerritoryFrance
CityParis
Period7/07/1912/07/19

All Science Journal Classification (ASJC) codes

  • Theoretical Computer Science
  • Information Systems
  • Modelling and Simulation
  • Applied Mathematics

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