Codes for partially stuck-at memory cells

Antonia Wachter-Zeh, Eitan Yaakobi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper studies a new model of stuck-at memory cells which is motivated by the defect model of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell can store the levels 0, 1, . . ., q − 1, we say that it is partially stuck-at s if it can only store values which are at least s, where 1 ≤ s ≤ q − 1. In this paper, we consider the case s = 1. A lower bound on the redundancy of a code which masks u partially stuck-at cells is u(1 − logq(q − 1)). An upper bound of min{u, n(1 − logq(q − 1))} on the redundancy can be achieved by either codes using only positive levels or codes which mask stuck-at cells (not partially). Our main contribution in this paper is the construction of efficient codes which improve upon this upper bound on the redundancy for all values of q and u.

Original languageEnglish
Title of host publicationSCC 2015 - 10th International ITG Conference on Systems, Communications and Coding
PublisherVDE Verlag GmbH
ISBN (Electronic)9783800736591
StatePublished - 2019
Event10th International ITG Conference on Systems, Communications and Coding, SCC 2015 - Hamburg, Germany
Duration: 2 Feb 20155 Feb 2015

Publication series

NameSCC 2015 - 10th International ITG Conference on Systems, Communications and Coding

Conference

Conference10th International ITG Conference on Systems, Communications and Coding, SCC 2015
Country/TerritoryGermany
CityHamburg
Period2/02/155/02/15

Keywords

  • (partially) stuck-at cells
  • Defect cells
  • Flash memories
  • Phase change memories

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Information Systems
  • Software

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