CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion

Yury Turkulets, Amir Silber, Alexander Ripp, Mark Sokolovsky, Ilan Shalish

Research output: Contribution to journalArticlepeer-review


Polysilicon receives attention nowadays as a means to incorporate 3D-structured photonic devices into silicon processes. However, doping of buried layers of a typical 3D structure has been a challenge. We present a method for doping of buried polysilicon layers by solid phase diffusion. Using an underlying silicon oxide layer as a dopant source facilitates diffusion of dopants into the bottom side of the polysilicon layer. The polysilicon is grown on top of the oxide layer, after the latter has been doped by ion implantation. Post-growth heat treatment drives in the dopant from the oxide into the polysilicon. To model the process, we studied the diffusion of the two most common silicon dopants, boron (B) and phosphorus (P), using secondary ion mass spectroscopy profiles. Our results show that shallow concentration profiles can be achieved in a buried polysilicon layer using the proposed technique. We present a quantitative 3D model for the diffusion of B and P in polysilicon, which turns the proposed method into an engineerable technique.

Original languageAmerican English
Article number132101
JournalApplied Physics Letters
Issue number13
StatePublished - 28 Mar 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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