Abstract
A novel electrostatically formed nano-wire (EFN) transistor for temperature sensing is presented. The device is a silicon-on-insulator multigate field-effect transistor, in which a nanowire-shaped conducting channel vertical position and area are controlled by the bias applied to the back gate, and two junction-side gates. Our measurements depict temperature sensitivity of 7.7%/K for EFN transistors which is among the best reported values for semiconductor temperature sensing devices TMOS and FET's. Optimal operational voltage biases and currents for the EFN transistor regimes are evaluated from measurements and analyzed using three dimensional (3D) electrostatic device simulations and developed analytical model.
Original language | English |
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Article number | 8000690 |
Pages (from-to) | 3836-3840 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 64 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2017 |
Keywords
- CMOS temperature sensor
- electrostatically formed nanowire (EFN)
- multiple gates field-effect transistor
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering