Chemical epitaxy of CdS on GaAs

Ofir Friedman; Alexander Upcher; Tzvi Templeman; Vladimir Ezersky; Yuval Golan

doi:10.1039/c6tc05365c

Chemical epitaxy of CdS on GaAs

Ofir Friedman, Alexander Upcher, Tzvi Templeman, Vladimir Ezersky, Yuval Golan

Ben-Gurion University of the Negev

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the microstructure and crystallographic orientation of CdS films chemically deposited on GaAs substrates. CdS thin films deposited on GaAs(100) showed an oriented polycrystalline micro-structure. Depending on the duration and the temperature of the deposition, two out-of-plane orientations were obtained, with the (10.1) and (00.1) planes of the wurtzite CdS film aligned parallel to the GaAs substrate surface. While the orientation of CdS thin films on GaAs(100) substrate is highly sensitive to the deposition parameters, they do not affect the orientation obtained on GaAs(111)B substrates, which resulted exclusively in monocrystalline (00.1) oriented CdS films. In all three orientations above, a high density of stacking-faults was observed in the films. On the other hand, growth on GaAs(111)A substrate resulted in randomly oriented polycrystalline films. This work provides the first reported evidence for chemical epitaxy of CdS on GaAs.

Original language	American English
Pages (from-to)	1660-1667
Number of pages	8
Journal	Journal of Materials Chemistry C
Volume	5
Issue number	7
DOIs	https://doi.org/10.1039/c6tc05365c
State	Published - 1 Jan 2017

All Science Journal Classification (ASJC) codes

General Chemistry
Materials Chemistry

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10.1039/c6tc05365c

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title = "Chemical epitaxy of CdS on GaAs",

abstract = "We have studied the microstructure and crystallographic orientation of CdS films chemically deposited on GaAs substrates. CdS thin films deposited on GaAs(100) showed an oriented polycrystalline micro-structure. Depending on the duration and the temperature of the deposition, two out-of-plane orientations were obtained, with the (10.1) and (00.1) planes of the wurtzite CdS film aligned parallel to the GaAs substrate surface. While the orientation of CdS thin films on GaAs(100) substrate is highly sensitive to the deposition parameters, they do not affect the orientation obtained on GaAs(111)B substrates, which resulted exclusively in monocrystalline (00.1) oriented CdS films. In all three orientations above, a high density of stacking-faults was observed in the films. On the other hand, growth on GaAs(111)A substrate resulted in randomly oriented polycrystalline films. This work provides the first reported evidence for chemical epitaxy of CdS on GaAs.",

author = "Ofir Friedman and Alexander Upcher and Tzvi Templeman and Vladimir Ezersky and Yuval Golan",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2017",

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doi = "10.1039/c6tc05365c",

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T1 - Chemical epitaxy of CdS on GaAs

AU - Friedman, Ofir

AU - Upcher, Alexander

AU - Templeman, Tzvi

AU - Ezersky, Vladimir

AU - Golan, Yuval

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We have studied the microstructure and crystallographic orientation of CdS films chemically deposited on GaAs substrates. CdS thin films deposited on GaAs(100) showed an oriented polycrystalline micro-structure. Depending on the duration and the temperature of the deposition, two out-of-plane orientations were obtained, with the (10.1) and (00.1) planes of the wurtzite CdS film aligned parallel to the GaAs substrate surface. While the orientation of CdS thin films on GaAs(100) substrate is highly sensitive to the deposition parameters, they do not affect the orientation obtained on GaAs(111)B substrates, which resulted exclusively in monocrystalline (00.1) oriented CdS films. In all three orientations above, a high density of stacking-faults was observed in the films. On the other hand, growth on GaAs(111)A substrate resulted in randomly oriented polycrystalline films. This work provides the first reported evidence for chemical epitaxy of CdS on GaAs.

AB - We have studied the microstructure and crystallographic orientation of CdS films chemically deposited on GaAs substrates. CdS thin films deposited on GaAs(100) showed an oriented polycrystalline micro-structure. Depending on the duration and the temperature of the deposition, two out-of-plane orientations were obtained, with the (10.1) and (00.1) planes of the wurtzite CdS film aligned parallel to the GaAs substrate surface. While the orientation of CdS thin films on GaAs(100) substrate is highly sensitive to the deposition parameters, they do not affect the orientation obtained on GaAs(111)B substrates, which resulted exclusively in monocrystalline (00.1) oriented CdS films. In all three orientations above, a high density of stacking-faults was observed in the films. On the other hand, growth on GaAs(111)A substrate resulted in randomly oriented polycrystalline films. This work provides the first reported evidence for chemical epitaxy of CdS on GaAs.

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DO - 10.1039/c6tc05365c

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EP - 1667

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 7

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Chemical epitaxy of CdS on GaAs

Abstract

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