Abstract
Flash memory has become the storage medium of choice in portable consumer electronic applications, and high performance solid state drives (SSDs) are also being introduced into mobile computing, enterprise storage, data warehousing, and data-intensive computing systems. On the other hand, flash memory technologies present major challenges in the areas of device reliability, endurance, and energy efficiency. In this work, the error behavior of TLC flash is studied through an empirical database of errors which were induced by write, read, and erase operations. Based on this database, error characterization at the block and page level is given. To address the observed error behavior, a new error-correcting scheme for TLC flash is given and is compared with BCH and LDPC codes.
| Original language | English |
|---|---|
| Title of host publication | 2012 International Conference on Computing, Networking and Communications, ICNC'12 |
| Pages | 486-491 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 2012 |
| Externally published | Yes |
| Event | 2012 International Conference on Computing, Networking and Communications, ICNC'12 - Maui, HI, United States Duration: 30 Jan 2012 → 2 Feb 2012 |
Publication series
| Name | 2012 International Conference on Computing, Networking and Communications, ICNC'12 |
|---|
Conference
| Conference | 2012 International Conference on Computing, Networking and Communications, ICNC'12 |
|---|---|
| Country/Territory | United States |
| City | Maui, HI |
| Period | 30/01/12 → 2/02/12 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Electrical and Electronic Engineering
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