Characterization and error-correcting codes for TLC flash memories

Eitan Yaakobi, Laura Grupp, Paul H. Siegel, Steven Swanson, Jack K. Wolf

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Flash memory has become the storage medium of choice in portable consumer electronic applications, and high performance solid state drives (SSDs) are also being introduced into mobile computing, enterprise storage, data warehousing, and data-intensive computing systems. On the other hand, flash memory technologies present major challenges in the areas of device reliability, endurance, and energy efficiency. In this work, the error behavior of TLC flash is studied through an empirical database of errors which were induced by write, read, and erase operations. Based on this database, error characterization at the block and page level is given. To address the observed error behavior, a new error-correcting scheme for TLC flash is given and is compared with BCH and LDPC codes.

Original languageEnglish
Title of host publication2012 International Conference on Computing, Networking and Communications, ICNC'12
Pages486-491
Number of pages6
DOIs
StatePublished - 2012
Externally publishedYes
Event2012 International Conference on Computing, Networking and Communications, ICNC'12 - Maui, HI, United States
Duration: 30 Jan 20122 Feb 2012

Publication series

Name2012 International Conference on Computing, Networking and Communications, ICNC'12

Conference

Conference2012 International Conference on Computing, Networking and Communications, ICNC'12
Country/TerritoryUnited States
CityMaui, HI
Period30/01/122/02/12

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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