Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy

I. Levine, I. Gamov, M. Rusu, K. Irmscher, C. Merschjann, E. Richter, M. Weyers, Th Dittrich

Research output: Contribution to journalArticlepeer-review

Abstract

A bulk photovoltaic effect was observed in insulating carbon-doped gallium nitride crystals by investigating the light-induced change of the contact potential difference with a Kelvin probe as a function of the carbon concentration in the crystal. Bulk polarization was caused by excitation of defects setting in at photon energies of 0.95-1.05 eV (C1) and 2.5-2.6 eV (C3). From the dependence on the carbon concentration, C1 can be assigned to isolated carbon defects and C3 to tricarbon defects.

Original languageEnglish
Article number245205
JournalPhysical Review B
Volume101
Issue number24
DOIs
StatePublished - 15 Jun 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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