Abstract
A bulk photovoltaic effect was observed in insulating carbon-doped gallium nitride crystals by investigating the light-induced change of the contact potential difference with a Kelvin probe as a function of the carbon concentration in the crystal. Bulk polarization was caused by excitation of defects setting in at photon energies of 0.95-1.05 eV (C1) and 2.5-2.6 eV (C3). From the dependence on the carbon concentration, C1 can be assigned to isolated carbon defects and C3 to tricarbon defects.
Original language | English |
---|---|
Article number | 245205 |
Journal | Physical Review B |
Volume | 101 |
Issue number | 24 |
DOIs | |
State | Published - 15 Jun 2020 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics