Bias-induced polarization effect in Cd_1-xZn_xTe and Cd_1-yMn_yTe detectors

The study aims to compare the evolution of the electric field profiles in CdZnTe and CdMnTe detectors from the initial biasing activation until the steady state is reached (referred here as polarization effect). The crystals are grown by the same method, so the comparison emphasizes the difference between Zn- and Mn-based traps. The results demonstrate that the settling times in the CdZnTe and CdMnTe devices differ, but both are on the scale of hours. The effect of these, rather moderate variations on the charge collection efficiency for gamma photons should be limited. In addition, based on experimental results and TCAD calculations, it can be conjectured that a much stronger change in the electric field is induced by the bias polarization process in the front interface layer, which affects the charge collection only when carrier-generation occurring in and around the interface.