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Benchmarking and Fidelity Response Theory of High-Fidelity Rydberg Entangling Gates

Richard Bing Shiun Tsai, Xiangkai Sun, Adam L. Shaw, Ran Finkelstein, Manuel Endres

Research output: Contribution to journalArticlepeer-review

Abstract

The fidelity of entangling operations is a key figure of merit in quantum information processing, especially in the context of quantum error correction. High-fidelity entangling gates in neutral atoms have seen remarkable advancement recently. A full understanding of error sources and their respective contributions to gate infidelity will enable the prediction of fundamental limits on quantum gates in neutral atom platforms with realistic experimental constraints. In this work, we implement the time-optimal Rydberg controlled-Z (CZ) gate, design a circuit to benchmark its fidelity, and achieve a fidelity, averaged over symmetric input states, of 0.9971(5), downward corrected for leakage error, which together with our recent work [Nature 634, 321-327 (2024)] forms a new state of the art for neutral atoms. The remaining infidelity is explained by an ab initio error model, consistent with our experimental results over a range of gate speeds, with varying contributions from different error sources. Further, we develop a fidelity response theory to efficiently predict infidelity from laser noise with nontrivial power spectral densities and derive scaling laws of infidelity with gate speed. Besides its capability of predicting gate fidelity, we also utilize the fidelity response theory to compare and optimize gate protocols, to learn laser frequency noise, and to study the noise response for quantum simulation tasks. Finally, we predict that a CZ gate fidelity of 0.999 is feasible with realistic experimental upgrades.

Original languageEnglish
Article number010331
JournalPRX quantum
Volume6
Issue number1
DOIs
StatePublished - Jan 2025

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • General Computer Science
  • Mathematical Physics
  • General Physics and Astronomy
  • Applied Mathematics
  • Electrical and Electronic Engineering

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