Basic model of absorption depth and injection levels in silicon under intermediate illumination levels

Ran Aharoni; Moshe Sinvani; Yaakov R. Tischler; Zeev Zalevsky

doi:10.1016/j.optcom.2012.10.061

Basic model of absorption depth and injection levels in silicon under intermediate illumination levels

Ran Aharoni, Moshe Sinvani, Yaakov R. Tischler, Zeev Zalevsky

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we present a novel model that connects the absorption depth of photons into silicon with the power of the applied illumination. So far in the literature the absorption depth was solely dependent on the wavelength of the illuminating photons. The new relation is important for better designing silicon based devices that are illuminated with high power lasers. Experimental results validate the proposed modeling.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Optics Communications
Volume	291
DOIs	https://doi.org/10.1016/j.optcom.2012.10.061
State	Published - 15 Mar 2013

Keywords

Absorption
Absorption depth
Silicon

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.1016/j.optcom.2012.10.061

Cite this

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title = "Basic model of absorption depth and injection levels in silicon under intermediate illumination levels",

abstract = "In this paper we present a novel model that connects the absorption depth of photons into silicon with the power of the applied illumination. So far in the literature the absorption depth was solely dependent on the wavelength of the illuminating photons. The new relation is important for better designing silicon based devices that are illuminated with high power lasers. Experimental results validate the proposed modeling.",

keywords = "Absorption, Absorption depth, Silicon",

author = "Ran Aharoni and Moshe Sinvani and Tischler, \{Yaakov R.\} and Zeev Zalevsky",

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doi = "10.1016/j.optcom.2012.10.061",

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AU - Aharoni, Ran

AU - Sinvani, Moshe

AU - Tischler, Yaakov R.

AU - Zalevsky, Zeev

PY - 2013/3/15

Y1 - 2013/3/15

N2 - In this paper we present a novel model that connects the absorption depth of photons into silicon with the power of the applied illumination. So far in the literature the absorption depth was solely dependent on the wavelength of the illuminating photons. The new relation is important for better designing silicon based devices that are illuminated with high power lasers. Experimental results validate the proposed modeling.

AB - In this paper we present a novel model that connects the absorption depth of photons into silicon with the power of the applied illumination. So far in the literature the absorption depth was solely dependent on the wavelength of the illuminating photons. The new relation is important for better designing silicon based devices that are illuminated with high power lasers. Experimental results validate the proposed modeling.

KW - Absorption

KW - Absorption depth

KW - Silicon

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DO - 10.1016/j.optcom.2012.10.061

M3 - مقالة

SN - 0030-4018

VL - 291

SP - 1

EP - 6

JO - Optics Communications

JF - Optics Communications

ER -

Basic model of absorption depth and injection levels in silicon under intermediate illumination levels

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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