Band gap engineering of cdte quantum dots by hg alloying in infrared region

Anurag Sahu; Shay Tirosh; Arie Zaban; Kirankumar Hiremath; Ambesh Dixit

doi:10.1007/978-3-319-97604-4_187

Band gap engineering of cdte quantum dots by hg alloying in infrared region

Anurag Sahu, Shay Tirosh, Arie Zaban, Kirankumar Hiremath, Ambesh Dixit

Department of Chemistry

Bar-Ilan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We synthesized Hg alloyed CdTe quantum dots (Cd_1−xHg_xTe) using hydrothermal route. N-acetyl-cysteine is used as the capping agent for water dispersed Cd_1−xHg_xTe (x = 0, 0.05, 0.1 and 0.5) quantum dots. The diameter of the synthesized quantum dots is 3.8 ± 0.5 nm, as estimated from high resolution transmission electron micrographs. The mercury molar fraction modified band gap engineering is demonstrated with band gap changing from 2.5 eV for CdTe quantum dots to 1.25 eV for Cd_0.5Hg_0.5Te.

Original language	English
Title of host publication	The Physics of Semiconductor Devices - Proceedings of IWPSD 2017
Editors	R.K. Sharma, D.S. Rawal
Pages	1231-1234
Number of pages	4
DOIs	https://doi.org/10.1007/978-3-319-97604-4_187
State	Published - 2019
Event	19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017 - New Delhi, India Duration: 11 Dec 2017 → 15 Dec 2017

Publication series

Name	Springer Proceedings in Physics
Volume	215

Conference

Conference	19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017
Country/Territory	India
City	New Delhi
Period	11/12/17 → 15/12/17

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1007/978-3-319-97604-4_187

Cite this

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title = "Band gap engineering of cdte quantum dots by hg alloying in infrared region",

abstract = "We synthesized Hg alloyed CdTe quantum dots (Cd1−xHgxTe) using hydrothermal route. N-acetyl-cysteine is used as the capping agent for water dispersed Cd1−xHgxTe (x = 0, 0.05, 0.1 and 0.5) quantum dots. The diameter of the synthesized quantum dots is 3.8 ± 0.5 nm, as estimated from high resolution transmission electron micrographs. The mercury molar fraction modified band gap engineering is demonstrated with band gap changing from 2.5 eV for CdTe quantum dots to 1.25 eV for Cd0.5Hg0.5Te.",

author = "Anurag Sahu and Shay Tirosh and Arie Zaban and Kirankumar Hiremath and Ambesh Dixit",

note = "Publisher Copyright: {\textcopyright} Springer Nature Switzerland AG 2019.; 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017 ; Conference date: 11-12-2017 Through 15-12-2017",

year = "2019",

doi = "10.1007/978-3-319-97604-4_187",

language = "الإنجليزيّة",

isbn = "9783319976037",

series = "Springer Proceedings in Physics",

pages = "1231--1234",

editor = "R.K. Sharma and D.S. Rawal",

booktitle = "The Physics of Semiconductor Devices - Proceedings of IWPSD 2017",

}

Sahu, A, Tirosh, S, Zaban, A, Hiremath, K & Dixit, A 2019, Band gap engineering of cdte quantum dots by hg alloying in infrared region. in RK Sharma & DS Rawal (eds), The Physics of Semiconductor Devices - Proceedings of IWPSD 2017. Springer Proceedings in Physics, vol. 215, pp. 1231-1234, 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, New Delhi, India, 11/12/17. https://doi.org/10.1007/978-3-319-97604-4_187

Band gap engineering of cdte quantum dots by hg alloying in infrared region. / Sahu, Anurag; Tirosh, Shay; Zaban, Arie et al.
The Physics of Semiconductor Devices - Proceedings of IWPSD 2017. ed. / R.K. Sharma; D.S. Rawal. 2019. p. 1231-1234 (Springer Proceedings in Physics; Vol. 215).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Band gap engineering of cdte quantum dots by hg alloying in infrared region

AU - Sahu, Anurag

AU - Tirosh, Shay

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AU - Hiremath, Kirankumar

AU - Dixit, Ambesh

PY - 2019

Y1 - 2019

N2 - We synthesized Hg alloyed CdTe quantum dots (Cd1−xHgxTe) using hydrothermal route. N-acetyl-cysteine is used as the capping agent for water dispersed Cd1−xHgxTe (x = 0, 0.05, 0.1 and 0.5) quantum dots. The diameter of the synthesized quantum dots is 3.8 ± 0.5 nm, as estimated from high resolution transmission electron micrographs. The mercury molar fraction modified band gap engineering is demonstrated with band gap changing from 2.5 eV for CdTe quantum dots to 1.25 eV for Cd0.5Hg0.5Te.

AB - We synthesized Hg alloyed CdTe quantum dots (Cd1−xHgxTe) using hydrothermal route. N-acetyl-cysteine is used as the capping agent for water dispersed Cd1−xHgxTe (x = 0, 0.05, 0.1 and 0.5) quantum dots. The diameter of the synthesized quantum dots is 3.8 ± 0.5 nm, as estimated from high resolution transmission electron micrographs. The mercury molar fraction modified band gap engineering is demonstrated with band gap changing from 2.5 eV for CdTe quantum dots to 1.25 eV for Cd0.5Hg0.5Te.

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U2 - 10.1007/978-3-319-97604-4_187

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M3 - منشور من مؤتمر

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T3 - Springer Proceedings in Physics

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BT - The Physics of Semiconductor Devices - Proceedings of IWPSD 2017

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A2 - Rawal, D.S.

T2 - 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017

Y2 - 11 December 2017 through 15 December 2017

ER -

Band gap engineering of cdte quantum dots by hg alloying in infrared region

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