Atomic Layer Deposition of the Solid Electrolyte LiPON

Alexander C. Kozen; Alexander J. Pearse; Chuan Fu Lin; Malachi Noked; Gary W. Rubloff

doi:10.1021/acs.chemmater.5b01654

Atomic Layer Deposition of the Solid Electrolyte LiPON

Alexander C. Kozen, Alexander J. Pearse, Chuan Fu Lin, Malachi Noked, Gary W. Rubloff

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate an atomic layer deposition (ALD) process for the solid electrolyte lithium phosphorousoxynitride (LiPON) using lithium tert-butoxide (LiO^tBu), H₂O, trimethylphosphate (TMP), and plasma N₂ (^PN₂) as precursors. We use in-situ spectroscopic ellipsometry to determine growth rates for process optimization to design a rational, quaternary precursor ALD process where only certain substrate-precursor chemical reactions are favorable. We demonstrate via in-situ XPS tunable nitrogen incorporation into the films by variation of the ^PN₂ dose and find that ALD films over approximately 4.5% nitrogen are amorphous, whereas LiPON ALD films with less than 4.5% nitrogen are polycrystalline. Finally, we characterize the ionic conductivity of the ALD films as a function of nitrogen content and demonstrate their functionality on a model battery electrode - a Si anode on a Cu current collector.

Original language	English
Pages (from-to)	5324-5331
Number of pages	8
Journal	Chemistry of Materials
Volume	27
Issue number	15
DOIs	https://doi.org/10.1021/acs.chemmater.5b01654
State	Published - 9 Jul 2015
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
General Chemical Engineering
Materials Chemistry

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@article{1dec2dd947c54f899ef6affb54ba8eee,

title = "Atomic Layer Deposition of the Solid Electrolyte LiPON",

abstract = "We demonstrate an atomic layer deposition (ALD) process for the solid electrolyte lithium phosphorousoxynitride (LiPON) using lithium tert-butoxide (LiOtBu), H2O, trimethylphosphate (TMP), and plasma N2 (PN2) as precursors. We use in-situ spectroscopic ellipsometry to determine growth rates for process optimization to design a rational, quaternary precursor ALD process where only certain substrate-precursor chemical reactions are favorable. We demonstrate via in-situ XPS tunable nitrogen incorporation into the films by variation of the PN2 dose and find that ALD films over approximately 4.5\% nitrogen are amorphous, whereas LiPON ALD films with less than 4.5\% nitrogen are polycrystalline. Finally, we characterize the ionic conductivity of the ALD films as a function of nitrogen content and demonstrate their functionality on a model battery electrode - a Si anode on a Cu current collector.",

author = "Kozen, \{Alexander C.\} and Pearse, \{Alexander J.\} and Lin, \{Chuan Fu\} and Malachi Noked and Rubloff, \{Gary W.\}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = jul,

day = "9",

doi = "10.1021/acs.chemmater.5b01654",

language = "الإنجليزيّة",

volume = "27",

pages = "5324--5331",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "15",

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TY - JOUR

T1 - Atomic Layer Deposition of the Solid Electrolyte LiPON

AU - Kozen, Alexander C.

AU - Pearse, Alexander J.

AU - Lin, Chuan Fu

AU - Noked, Malachi

AU - Rubloff, Gary W.

PY - 2015/7/9

Y1 - 2015/7/9

N2 - We demonstrate an atomic layer deposition (ALD) process for the solid electrolyte lithium phosphorousoxynitride (LiPON) using lithium tert-butoxide (LiOtBu), H2O, trimethylphosphate (TMP), and plasma N2 (PN2) as precursors. We use in-situ spectroscopic ellipsometry to determine growth rates for process optimization to design a rational, quaternary precursor ALD process where only certain substrate-precursor chemical reactions are favorable. We demonstrate via in-situ XPS tunable nitrogen incorporation into the films by variation of the PN2 dose and find that ALD films over approximately 4.5% nitrogen are amorphous, whereas LiPON ALD films with less than 4.5% nitrogen are polycrystalline. Finally, we characterize the ionic conductivity of the ALD films as a function of nitrogen content and demonstrate their functionality on a model battery electrode - a Si anode on a Cu current collector.

AB - We demonstrate an atomic layer deposition (ALD) process for the solid electrolyte lithium phosphorousoxynitride (LiPON) using lithium tert-butoxide (LiOtBu), H2O, trimethylphosphate (TMP), and plasma N2 (PN2) as precursors. We use in-situ spectroscopic ellipsometry to determine growth rates for process optimization to design a rational, quaternary precursor ALD process where only certain substrate-precursor chemical reactions are favorable. We demonstrate via in-situ XPS tunable nitrogen incorporation into the films by variation of the PN2 dose and find that ALD films over approximately 4.5% nitrogen are amorphous, whereas LiPON ALD films with less than 4.5% nitrogen are polycrystalline. Finally, we characterize the ionic conductivity of the ALD films as a function of nitrogen content and demonstrate their functionality on a model battery electrode - a Si anode on a Cu current collector.

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U2 - 10.1021/acs.chemmater.5b01654

DO - 10.1021/acs.chemmater.5b01654

M3 - مقالة

SN - 0897-4756

VL - 27

SP - 5324

EP - 5331

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 15

ER -

Atomic Layer Deposition of the Solid Electrolyte LiPON

Abstract

All Science Journal Classification (ASJC) codes

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