Asymmetric and Symmetric Single-Pole Double-Throw With Improved Power Handling Using Indirectly Heated Phase-Change Switches

Nicolas Wainstein, Ami Orren, Rivka Galya Nir-Harwood, Eilam Yalon, Shahar Kvatinsky

Research output: Contribution to journalArticlepeer-review

Abstract

Four-terminal indirectly heated phase-change switches (IPCSs) have emerged as excellent candidates for radio-frequency integrated circuit (RFIC) applications due to their state-of-the-art cutoff frequency, nonvolatility, CMOS compatibility, and exceptional linearity. However, IPCS performance is limited by relatively low-power handling capabilities in the OFF-state, limited by the Ovonic threshold switching (OTS) phenomenon. In this article, we propose the use of a quad configuration consisting of two series-connected IPCS in parallel with another two series-connected IPCS. This series connection increases the effective threshold voltage, thereby enhancing power handling compared to a single device. We experimentally demonstrate the implementation of this quad configuration in asymmetric and symmetric single-pole double-throw (SPDT) switches. Fabricated using an in-house process, these designs achieve an insertion loss (IL) below 0.8 dB and isolation higher than 17 dB within the dc-15 GHz frequency band. Furthermore, we explore techniques, such as reducing the probing pads and series-shunt configuration, to boost isolation beyond 30 dB. Thanks to the quad configuration, the threshold voltage increases from 5 to 13.5 V, predicatively enabling power handling above 35 dBm.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
DOIs
StateAccepted/In press - 2024

Keywords

  • GeTe
  • indirectly heated phase-change switch (IPCS)
  • ovonic threshold switching (OTS)
  • phase change
  • phase-change material (PCM)
  • power handling
  • RF
  • single-pole double-throw (SPDT)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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