Angular dependence of the Hall effect of La 0.8Sr 0.2MnO 3 films

Netanel Naftalis, Noam Haham, Jason Hoffman, Matthew S.J. Marshall, C. H. Ahn, Lior Klein

Research output: Contribution to journalArticlepeer-review

Abstract

We find that the Hall effect resistivity (ρ xy) of thin films of La 0.8Sr 0.2MnO 3 varies as a function of the angle θ between the applied magnetic field and the film normal as ρ xy=acosθ+bcos3θ, where |b| increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term b, suggesting it is a manifestation of an intrinsic transport property.

Original languageEnglish
Article number184402
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number18
DOIs
StatePublished - 5 Nov 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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