Abstract
Third-harmonic current generation in a CMOS transistor is modeled and analyzed including the effects of large-signal clipping and high-frequency roll-off for the application of millimeter-wave (mm-wave) frequency multipliers. Using the model and introducing harmonic rejection techniques, a wideband 8.5-dBm output-power x9 frequency multiplier from X-band to W-band implemented using a 65-nm CMOS process is designed and characterized. Six transformer coupled differential stages are used, two tripler stages, a Ka-band amplifier, and a three-stage W-band power amplifier (PA). The circuit reaches a saturated output power of 8.5 dBm at 91.8 GHz with a 12.2% bandwidth from 88 to 99.5 GHz. Excellent suppression of unwanted harmonics is achieved with better than 31 dBc across all bandwidth. The core design occupies only 390 μ m,×\,675 μ m and consumes 438 mW from a 1.2-/2.4-V supply.
| Original language | English |
|---|---|
| Article number | 6493471 |
| Pages (from-to) | 1924-1933 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 61 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2013 |
Keywords
- Amplifiers
- CMOS millimeter-wave (mm-wave) frequency multiplier
- Ka-band
- W-band
- X-band
- conduction angle
- local oscillator (LO)
- power amplifier (PA)
- transformers
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering