An SRAM based on the MSET device

From its conceptual inception in 2015, the combined capabilities of the multiple-state electrostatically formed nanowire transistor (MSET) have given way to a unique set of logic structures-in the example of NAND and NOR gates-which utilize fewer transistors as compared to conventional technologies. In this paper, we expand the recently published framework of MSET logic functions and present a static random access memory (SRAM) memory structure that consists entirely of MSET devices. Using TCAD simulations, we demonstrate the MSET-SRAM functionality in several phases of operation, while analyzing its performance in terms of speed, stability, and power consumption.