TY - GEN
T1 - An RF memristor model and memristive single-pole double-throw switches
AU - Wainstein, Nicolas
AU - Kvatinsky, Shahar
N1 - Publisher Copyright: © 2017 IEEE.
PY - 2017/9/25
Y1 - 2017/9/25
N2 - In this paper, we present a scalable physics-based model that accurately predicts the steady-state high-frequency behavior of memristive RF switches. This model is, to the best of our knowledge, the first lumped RF memristor model that includes device parasitics obtained from physical measurements reported in the literature. Furthermore, we propose two topologies (series and shunt) for non-volatile single-voltage-controlled Single-Pole Double-Throw switches using the proposed lumped RF memristor model. These topologies exhibit low insertion loss and high isolation. Adding non-volatility to RF switches will result in reduced power consumption.
AB - In this paper, we present a scalable physics-based model that accurately predicts the steady-state high-frequency behavior of memristive RF switches. This model is, to the best of our knowledge, the first lumped RF memristor model that includes device parasitics obtained from physical measurements reported in the literature. Furthermore, we propose two topologies (series and shunt) for non-volatile single-voltage-controlled Single-Pole Double-Throw switches using the proposed lumped RF memristor model. These topologies exhibit low insertion loss and high isolation. Adding non-volatility to RF switches will result in reduced power consumption.
UR - http://www.scopus.com/inward/record.url?scp=85032653291&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2017.8050963
DO - 10.1109/ISCAS.2017.8050963
M3 - منشور من مؤتمر
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - IEEE International Symposium on Circuits and Systems
T2 - 50th IEEE International Symposium on Circuits and Systems, ISCAS 2017
Y2 - 28 May 2017 through 31 May 2017
ER -