@inproceedings{45d560e4cf8040d1adfaeacb183608c5,
title = "An F-Band Reflection Amplifier using 28 nm CMOS FD-SOI Technology for Active Reflectarrays and Spatial Power Combining Applications",
abstract = "A new topology of a reflection amplifier is proposed and demonstrated using a CMOS FD-SOI 28 nm process for high gain reflectarray antenna applications. The design is based on two sets of cross coupled pairs which are coupled inductively. An internal oscillations-block was implemented in order to improve the stability of the amplifier. Variable stable gain of 5-25 dB at the bandwidth of 106-127 GHz was achieved, with output power of up to 0 dBm (measurement limited). The total power consumption was 6-20 mW, depending on the exact bias configuration. The reflection amplifier results with a 3-dB bandwidth of up to 18%. The design consumes a core area of only 90×80 μm2 and allows the implementation of high efficiency active reflectarray antennas.",
keywords = "CMOS circuits, Microwave amplifiers, millimeter wave circuits, reflector antennas, silicon on insulator technology",
author = "Naftali Landsberg and Eran Socher",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",
year = "2016",
month = aug,
day = "9",
doi = "10.1109/MWSYM.2016.7540288",
language = "الإنجليزيّة",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE MTT-S International Microwave Symposium, IMS 2016",
address = "الولايات المتّحدة",
}