An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver

Nir Weissman; Samuel Jameson; Eran Socher

doi:10.1109/MWSYM.2016.7540217

An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver

Nir Weissman, Samuel Jameson, Eran Socher

School of Electrical Engineering

Tel Aviv University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A dual band F-band packaged transceiver at 95GHz and 130GHz in 65nm CMOS technology is presented. The transceiver architecture is based on a bi-directional operation with a maximum data rate of up to 12Gbps per band. Maximum output power on-chip of -0.5dBm and -1.5dBm were achieved in the low band (95GHz) and high band (130GHz) respectively and 12+12Gbps modulated signals are measured off-chip in the transmit mode. In the receive mode a BER<10-12 was achieved for the low band with data rates up to 12Gbps limited by the measurement equipment. The packaged transceiver demonstrates 10+10Gbps wireline bi-directional half-duplex communication with 41mW power consumption and 10+8Gbps full-duplex communication with 37.5mW power consumption, thus achieving 2pJ/bit of energy efficiency in the whole transceiver. The chip occupies an overall area of only 0.44mm2.

Original language	English
Title of host publication	2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509006984
DOIs	https://doi.org/10.1109/MWSYM.2016.7540217
State	Published - 9 Aug 2016
Event	2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States Duration: 22 May 2016 → 27 May 2016

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2016-August

Conference

Conference	2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Country/Territory	United States
City	San Francisco
Period	22/05/16 → 27/05/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CMOS
F-band
mm-wave
package
printed circuit board (PCB)
transceiver
transition
waveguide

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2016.7540217

Cite this

Weissman, N., Jameson, S., & Socher, E. (2016). An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver. In 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 Article 7540217 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2016.7540217

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abstract = "A dual band F-band packaged transceiver at 95GHz and 130GHz in 65nm CMOS technology is presented. The transceiver architecture is based on a bi-directional operation with a maximum data rate of up to 12Gbps per band. Maximum output power on-chip of -0.5dBm and -1.5dBm were achieved in the low band (95GHz) and high band (130GHz) respectively and 12+12Gbps modulated signals are measured off-chip in the transmit mode. In the receive mode a BER<10-12 was achieved for the low band with data rates up to 12Gbps limited by the measurement equipment. The packaged transceiver demonstrates 10+10Gbps wireline bi-directional half-duplex communication with 41mW power consumption and 10+8Gbps full-duplex communication with 37.5mW power consumption, thus achieving 2pJ/bit of energy efficiency in the whole transceiver. The chip occupies an overall area of only 0.44mm2.",

keywords = "CMOS, F-band, mm-wave, package, printed circuit board (PCB), transceiver, transition, waveguide",

author = "Nir Weissman and Samuel Jameson and Eran Socher",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",

year = "2016",

month = aug,

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doi = "10.1109/MWSYM.2016.7540217",

language = "الإنجليزيّة",

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Weissman, N, Jameson, S & Socher, E 2016, An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver. in 2016 IEEE MTT-S International Microwave Symposium, IMS 2016., 7540217, IEEE MTT-S International Microwave Symposium Digest, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE MTT-S International Microwave Symposium, IMS 2016, San Francisco, United States, 22/05/16. https://doi.org/10.1109/MWSYM.2016.7540217

An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver. / Weissman, Nir; Jameson, Samuel; Socher, Eran.
2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7540217 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Weissman, Nir

AU - Jameson, Samuel

AU - Socher, Eran

PY - 2016/8/9

Y1 - 2016/8/9

N2 - A dual band F-band packaged transceiver at 95GHz and 130GHz in 65nm CMOS technology is presented. The transceiver architecture is based on a bi-directional operation with a maximum data rate of up to 12Gbps per band. Maximum output power on-chip of -0.5dBm and -1.5dBm were achieved in the low band (95GHz) and high band (130GHz) respectively and 12+12Gbps modulated signals are measured off-chip in the transmit mode. In the receive mode a BER<10-12 was achieved for the low band with data rates up to 12Gbps limited by the measurement equipment. The packaged transceiver demonstrates 10+10Gbps wireline bi-directional half-duplex communication with 41mW power consumption and 10+8Gbps full-duplex communication with 37.5mW power consumption, thus achieving 2pJ/bit of energy efficiency in the whole transceiver. The chip occupies an overall area of only 0.44mm2.

AB - A dual band F-band packaged transceiver at 95GHz and 130GHz in 65nm CMOS technology is presented. The transceiver architecture is based on a bi-directional operation with a maximum data rate of up to 12Gbps per band. Maximum output power on-chip of -0.5dBm and -1.5dBm were achieved in the low band (95GHz) and high band (130GHz) respectively and 12+12Gbps modulated signals are measured off-chip in the transmit mode. In the receive mode a BER<10-12 was achieved for the low band with data rates up to 12Gbps limited by the measurement equipment. The packaged transceiver demonstrates 10+10Gbps wireline bi-directional half-duplex communication with 41mW power consumption and 10+8Gbps full-duplex communication with 37.5mW power consumption, thus achieving 2pJ/bit of energy efficiency in the whole transceiver. The chip occupies an overall area of only 0.44mm2.

KW - CMOS

KW - F-band

KW - mm-wave

KW - package

KW - printed circuit board (PCB)

KW - transceiver

KW - transition

KW - waveguide

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M3 - منشور من مؤتمر

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BT - 2016 IEEE MTT-S International Microwave Symposium, IMS 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE MTT-S International Microwave Symposium, IMS 2016

Y2 - 22 May 2016 through 27 May 2016

ER -

An F-band dual band 12+12Gbps packaged CMOS bi-directional transceiver

Abstract

Publication series

Conference

UN SDGs

Keywords

All Science Journal Classification (ASJC) codes

Access to Document

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