An Analysis of Flash Page Reuse With WOM Codes

Gala Yadgar, Eitan Yaakobi, Fabio Margaglia, Yue Li, Alexander Yucovich, Nachum Bundak, Lior Gilon, Nir Yakovi, Assaf Schuster, Andre Brinkmann, Yaakobi Eitan, L. I. Yue

Research output: Contribution to journalArticlepeer-review

Abstract

Flash memory is prevalent in modern servers and devices. Coupled with the scaling down of flash technology, the popularity of flash memory motivates the search for methods to increase flash reliability and lifetime. Erasures are the dominant cause of flash cell wear, but reducing them is challenging because flash is a write-once medium— memory cells must be erased prior to writing. An approach that has recently received considerable attention relies on write-once memory (WOM) codes, designed to accommodate additional writes on write-once media. However, the techniques proposed for reusing flash pages with WOM codes are limited in their scope. Many focus on the coding theory alone, whereas others suggest FTL designs that are application specific, or not applicable due to their complexity, overheads, or specific constraints of multilevel cell (MLC) flash. This work is the first that addresses all aspects of page reuse within an end-to-end analysis of a general-purpose FTL on MLC flash. We use a hardware evaluation setup to directly measure the short- and long-term effects of page reuse on SSD durability and energy consumption, and show that FTL design must explicitly take them into account. We then provide a detailed analytical model for deriving the optimal garbage collection policy for such FTL designs, and for predicting the benefit from reuse on realistic hardware and workload characteristics.

Original languageEnglish
Article number10
JournalACM Transactions on Storage
Volume14
Issue number1
DOIs
StatePublished - Apr 2018

Keywords

  • NAND flash
  • SSD
  • WOM codes
  • flash translation layer
  • offline analysis

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

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