An 800 Mhz Mixed-V_T 4T gain-cell embedded DRAM in 28 nm CMOS bulk process for approximate computing applications

Gain-cell embedded DRAM (GC-eDRAM) is an attractive alternative to traditional SRAM, due to its high-density, low-leakage, and inherent 2-ported operation, yet, its dynamic nature leads to limited retention time that requires periodic, power-hungry refresh cycles. This drawback is further aggravated in scaled technologies, where increased leakage currents and decreased in-cell storage capacitances lead to accelerated data integrity deterioration. However, the emerging approximate computing paradigm utilizes the inherent error resilience of some applications to tolerate data errors. Such error tolerance can be exploited by reducing the refresh rate in GC-eDRAM to achieve a substantial decrease in power consumption, at the cost of an increase in cell failure probability. In this paper, we present the first fabricated and fully functional GC-eDRAM in a 28nm bulk CMOS technology. The array, which is based on a novel mixed-V_T 4T bitcell, can be used in both traditional and for approximate computing applications, featuring a small silicon footprint and supporting high-performance operation. Silicon measurements demonstrate successful operation at 800 Mhz under a 900 mV supply, while retaining almost 30% lower area than a singleported 6T SRAM in the same technology.