AM4: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing

Esteban Garzon; Marco Lanuzza; Adam Teman; Leonid Yavits

doi:https://doi.org/10.1109/JETCAS.2023.3243222

AM⁴: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing

Esteban Garzon, Marco Lanuzza, Adam Teman, Leonid Yavits

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-situ, in the same place that the data is located. One of the key emerging technologies that promises to enable such computing-in-memory is spin-transfer torque magnetic tunnel junction (STT-MTJ). This paper proposes AM4, a combined STT-MTJ-based Content Addressable Memory (CAM), Ternary CAM (TCAM), approximate matching (similarity search) CAM (ACAM), and in-memory Associative Processor (AP) design, inspired by the recently announced Samsung MRAM crossbar. We demonstrate and evaluate the performance and energy-efficiency of the AM4-based AP using a variety of data intensive workloads. We show that an AM4-based AP outperforms state-of-the-art solutions both in performance (with the average speedup of about 10 ×) and energy-efficiency (by about 60 × on average).

Original language	English
Pages (from-to)	408-421
Number of pages	14
Journal	IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/JETCAS.2023.3243222
State	Published - 1 Mar 2023

Keywords

CAM
MRAM
MTJ
Non-von Neumann computer architecture
TCAM
associative memories
associative processor
double-barrier MTJ
emerging memories

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://doi.org/10.1109/JETCAS.2023.3243222

Cite this

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title = "AM4: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing",

abstract = "In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-situ, in the same place that the data is located. One of the key emerging technologies that promises to enable such computing-in-memory is spin-transfer torque magnetic tunnel junction (STT-MTJ). This paper proposes AM4, a combined STT-MTJ-based Content Addressable Memory (CAM), Ternary CAM (TCAM), approximate matching (similarity search) CAM (ACAM), and in-memory Associative Processor (AP) design, inspired by the recently announced Samsung MRAM crossbar. We demonstrate and evaluate the performance and energy-efficiency of the AM4-based AP using a variety of data intensive workloads. We show that an AM4-based AP outperforms state-of-the-art solutions both in performance (with the average speedup of about 10 ×) and energy-efficiency (by about 60 × on average).",

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author = "Esteban Garzon and Marco Lanuzza and Adam Teman and Leonid Yavits",

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