@inproceedings{7fd76d0da0bd496f85021df8d9267459,
title = "Amalgamated q-ary codes for multi-level flash memories",
abstract = "A flash memory is a non-volatile memory based on electron storing mechanism. A multi-level flash memory cell can store one of q symbols (q > 2). As q increases, the data becomes less reliable and the probability it may be distorted by different types of errors increases. This paper presents an amalgamated q-ary code capable of correcting a mixture of ts symmetric errors and additional ta asymmetric errors of limited magnitude l. In the proposed code, each q-ary codeword is composed of n multi-bit symbols, each multi-bit (i.e. q-ary) symbol is viewed as two sub-symbols over two different alphabets. The new construction has higher code rate than the conventional single-alphabet code.",
author = "Yifat Manzor and Osnat Keren",
year = "2012",
doi = "10.1109/dft.2012.6378207",
language = "الإنجليزيّة",
isbn = "9781467330428",
series = "Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems",
pages = "98--103",
booktitle = "Proceedings of the 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012",
note = "2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012 ; Conference date: 03-10-2012 Through 05-10-2012",
}