Ab initio study of intrinsic point defects in germanium sulfide

Keyphrases

• Ab Initio Study 100%
• Band Gap 25%
• Chemical Potential 25%
• Conductivity Type 25%
• Defect States 25%
• Double Sites 25%
• Electronic Properties 25%
• Electronic Structure 25%
• Energetic Properties 25%
• Environmental Conditions 25%
• Fermi Level 25%
• First-principles Method 25%
• Formation Energy 50%
• Frenkel Pairs 25%
• Ge Vacancies 50%
• Germanium Sulfide 100%
• GeSe 50%
• Intrinsic Point Defects 100%
• Level Shift 25%
• N-type Conductivity 25%
• Neutral Defects 50%
• Neutral Vacancy 25%
• Non-stoichiometric 25%
• P-type 25%
• S Vacancy 25%
• Schottky 50%
• Schottky Defects 25%
• Similar Material 50%
• Sn Vacancies 25%
• SnSe 50%
• State of Charge 25%
• Vacancy Defects 25%
• Valence Band Maximum 50%

Chemistry

• Band Gap 16%
• Chemical Potential 16%
• Crystal Point Defect 100%
• Crystal Vacancy 16%
• dimer 33%
• Doping 16%
• Electronic Property 16%
• Electronic State 16%
• Energetics 16%
• Fermi Level 16%
• First Principle 16%
• formation 33%
• Germanium 100%
• S-Vacancy 16%
• Sulfide 100%
• Valence Band 33%

Material Science

• Electronic Property 25%
• Germanium 100%
• Point Defect 100%
• Vacancy Defect 25%