A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications

Emanuel Cohen, Ofir Degani, Dan Ritter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A three stage single-ended LNA using transformer (TF) matching and gain-boosting by capacitive feedback for wideband operation in the 57-66GHz band is presented. The LNA, fabricated in a 65nm standard CMOS process, achieves a 23dB-gain 4dB NF at 6mA and 1.25V supply, with 2dBm P sat and 0.05mm 2 in size, demonstrating best reported noise figure, gain, power consumption and chip area compared to published 60 GHz LNAs. Different neutralization topologies were analyzed and compared based on analytical TF models that were created. Optimal gain-boosting is achieved by capacitive feedback after a 180-deg TF together with special decoupling capacitors of MOM and MOS stacked types.

Original languageEnglish
Title of host publication2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers
Pages207-210
Number of pages4
DOIs
StatePublished - 2012
Event2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Montreal, QC, Canada
Duration: 17 Jun 201219 Jun 2012

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Conference

Conference2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012
Country/TerritoryCanada
CityMontreal, QC
Period17/06/1219/06/12

Keywords

  • 60 GHz
  • LNA
  • NF
  • Neutralization
  • power consumption
  • transformers

All Science Journal Classification (ASJC) codes

  • General Engineering

Fingerprint

Dive into the research topics of 'A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications'. Together they form a unique fingerprint.

Cite this