A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications

Emanuel Cohen; Ofir Degani; Dan Ritter

doi:10.1109/RFIC.2012.6242265

A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications

Emanuel Cohen, Ofir Degani, Dan Ritter

Electrical and Computer Engineering

Technion - Israel Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A three stage single-ended LNA using transformer (TF) matching and gain-boosting by capacitive feedback for wideband operation in the 57-66GHz band is presented. The LNA, fabricated in a 65nm standard CMOS process, achieves a 23dB-gain 4dB NF at 6mA and 1.25V supply, with 2dBm P _sat and 0.05mm ² in size, demonstrating best reported noise figure, gain, power consumption and chip area compared to published 60 GHz LNAs. Different neutralization topologies were analyzed and compared based on analytical TF models that were created. Optimal gain-boosting is achieved by capacitive feedback after a 180-deg TF together with special decoupling capacitors of MOM and MOS stacked types.

Original language	English
Title of host publication	2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers
Pages	207-210
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2012.6242265
State	Published - 2012
Event	2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Montreal, QC, Canada Duration: 17 Jun 2012 → 19 Jun 2012

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Conference

Conference	2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012
Country/Territory	Canada
City	Montreal, QC
Period	17/06/12 → 19/06/12

Keywords

60 GHz
LNA
NF
Neutralization
power consumption
transformers

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1109/RFIC.2012.6242265

Cite this

Cohen, E., Degani, O., & Ritter, D. (2012). A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications. In 2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers (pp. 207-210). Article 6242265 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). https://doi.org/10.1109/RFIC.2012.6242265

@inproceedings{398277669e66443e8cceff1c905bc370,

title = "A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications",

abstract = "A three stage single-ended LNA using transformer (TF) matching and gain-boosting by capacitive feedback for wideband operation in the 57-66GHz band is presented. The LNA, fabricated in a 65nm standard CMOS process, achieves a 23dB-gain 4dB NF at 6mA and 1.25V supply, with 2dBm P sat and 0.05mm 2 in size, demonstrating best reported noise figure, gain, power consumption and chip area compared to published 60 GHz LNAs. Different neutralization topologies were analyzed and compared based on analytical TF models that were created. Optimal gain-boosting is achieved by capacitive feedback after a 180-deg TF together with special decoupling capacitors of MOM and MOS stacked types.",

keywords = "60 GHz, LNA, NF, Neutralization, power consumption, transformers",

author = "Emanuel Cohen and Ofir Degani and Dan Ritter",

year = "2012",

doi = "10.1109/RFIC.2012.6242265",

language = "الإنجليزيّة",

isbn = "9781467304146",

series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",

pages = "207--210",

booktitle = "2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers",

note = "2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 ; Conference date: 17-06-2012 Through 19-06-2012",

}

Cohen, E, Degani, O & Ritter, D 2012, A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications. in 2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers., 6242265, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 207-210, 2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012, Montreal, QC, Canada, 17/06/12. https://doi.org/10.1109/RFIC.2012.6242265

A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications. / Cohen, Emanuel; Degani, Ofir; Ritter, Dan.
2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers. 2012. p. 207-210 6242265 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Degani, Ofir

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N2 - A three stage single-ended LNA using transformer (TF) matching and gain-boosting by capacitive feedback for wideband operation in the 57-66GHz band is presented. The LNA, fabricated in a 65nm standard CMOS process, achieves a 23dB-gain 4dB NF at 6mA and 1.25V supply, with 2dBm P sat and 0.05mm 2 in size, demonstrating best reported noise figure, gain, power consumption and chip area compared to published 60 GHz LNAs. Different neutralization topologies were analyzed and compared based on analytical TF models that were created. Optimal gain-boosting is achieved by capacitive feedback after a 180-deg TF together with special decoupling capacitors of MOM and MOS stacked types.

AB - A three stage single-ended LNA using transformer (TF) matching and gain-boosting by capacitive feedback for wideband operation in the 57-66GHz band is presented. The LNA, fabricated in a 65nm standard CMOS process, achieves a 23dB-gain 4dB NF at 6mA and 1.25V supply, with 2dBm P sat and 0.05mm 2 in size, demonstrating best reported noise figure, gain, power consumption and chip area compared to published 60 GHz LNAs. Different neutralization topologies were analyzed and compared based on analytical TF models that were created. Optimal gain-boosting is achieved by capacitive feedback after a 180-deg TF together with special decoupling capacitors of MOM and MOS stacked types.

KW - 60 GHz

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KW - NF

KW - Neutralization

KW - power consumption

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M3 - منشور من مؤتمر

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A wideband gain-boosting 8mW LNA with 23dB gain and 4dB NF in 65nm CMOS process for 60 GHz applications

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Keywords

All Science Journal Classification (ASJC) codes

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