@inproceedings{80bddbf179c54febb5ca92de7b4d2014,
title = "A subthreshold voltage reference with coarse-fine voltage trimming",
abstract = "This paper presents a self-biased subthreshold voltage reference with several types of trimming options. A current trim is used to achieve similar currents across process corners. A coarse/fine voltage trim was implemented, which utilized different Vth's of the process as well as the reverse short-channel effect. The range of voltages obtained vary from 86mV to 536mV with steps of 16mV. The circuit was designed in a standard 0.18 μm CMOS process. Simulation results at Vcc=1V shows a temperature coefficient (TC) between 40 to 400 ppm/oC at different trims over a 120oC range. The nominal power consumption was 1.35nW with a highly compact area of 0.002",
keywords = "Analog design, CMOS, Reference voltages",
author = "David Zagouri and Joseph Shor",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE; 53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 ; Conference date: 22-05-2021 Through 28-05-2021",
year = "2021",
doi = "10.1109/ISCAS51556.2021.9401701",
language = "الإنجليزيّة",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings",
address = "الولايات المتّحدة",
}