A sub-VT 2T gain-cell memory for biomedical applications

Pascal Meinerzhagen; Adam Teman; Anatoli Mordakhay; Andreas Burg; Alexander Fish

doi:10.1109/SubVT.2012.6404318

A sub-V_T 2T gain-cell memory for biomedical applications

Pascal Meinerzhagen
, Adam Teman
, Anatoli Mordakhay
, Andreas Burg
, Alexander Fish

Department of Electrical & Computer Engineering

Ben-Gurion University of the Negev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Biomedical systems often require several kb of embedded memory and are typically operated in the subthreshold (sub-V_T) domain for good energy-efficiency. Embedded memories and their leakage current can easily dominate the overall silicon area and the total power consumption, respectively. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. For the first time, this paper presents a gain-cell array which is fully functional in the sub-V_T regime and achieves a data retention time that is more than 10⁴ times higher than the access time. Monte Carlos simulations show that the 2 kb gain-cell array, implemented in a mature 0.18μm CMOS node and supplied with a sub-V_T voltage of 400mV, exhibits robust write and read operations at 500 kHz under parametric variations and has over 99% availibilty for read and write access.

Original language	English
Title of host publication	2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012
DOIs	https://doi.org/10.1109/SubVT.2012.6404318
State	Published - 1 Dec 2012
Event	2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012 - Waltham, MA, United States Duration: 9 Oct 2012 → 10 Oct 2012

Publication series

Name	2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012

Conference

Conference	2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012
Country/Territory	United States
City	Waltham, MA
Period	9/10/12 → 10/10/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/SubVT.2012.6404318

Cite this

@inproceedings{f5c27987721f42c7bc2e65285a8fd457,

title = "A sub-VT 2T gain-cell memory for biomedical applications",

abstract = "Biomedical systems often require several kb of embedded memory and are typically operated in the subthreshold (sub-VT) domain for good energy-efficiency. Embedded memories and their leakage current can easily dominate the overall silicon area and the total power consumption, respectively. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. For the first time, this paper presents a gain-cell array which is fully functional in the sub-VT regime and achieves a data retention time that is more than 104 times higher than the access time. Monte Carlos simulations show that the 2 kb gain-cell array, implemented in a mature 0.18μm CMOS node and supplied with a sub-VT voltage of 400mV, exhibits robust write and read operations at 500 kHz under parametric variations and has over 99\% availibilty for read and write access.",

author = "Pascal Meinerzhagen and Adam Teman and Anatoli Mordakhay and Andreas Burg and Alexander Fish",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/SubVT.2012.6404318",

language = "الإنجليزيّة",

isbn = "9781467315876",

series = "2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012",

booktitle = "2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012",

note = "2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012 ; Conference date: 09-10-2012 Through 10-10-2012",

}

Meinerzhagen, P, Teman, A, Mordakhay, A, Burg, A & Fish, A 2012, A sub-V_T 2T gain-cell memory for biomedical applications. in 2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012., 6404318, 2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012, 2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012, Waltham, MA, United States, 9/10/12. https://doi.org/10.1109/SubVT.2012.6404318

TY - GEN

T1 - A sub-VT 2T gain-cell memory for biomedical applications

AU - Meinerzhagen, Pascal

AU - Teman, Adam

AU - Mordakhay, Anatoli

AU - Burg, Andreas

AU - Fish, Alexander

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Biomedical systems often require several kb of embedded memory and are typically operated in the subthreshold (sub-VT) domain for good energy-efficiency. Embedded memories and their leakage current can easily dominate the overall silicon area and the total power consumption, respectively. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. For the first time, this paper presents a gain-cell array which is fully functional in the sub-VT regime and achieves a data retention time that is more than 104 times higher than the access time. Monte Carlos simulations show that the 2 kb gain-cell array, implemented in a mature 0.18μm CMOS node and supplied with a sub-VT voltage of 400mV, exhibits robust write and read operations at 500 kHz under parametric variations and has over 99% availibilty for read and write access.

AB - Biomedical systems often require several kb of embedded memory and are typically operated in the subthreshold (sub-VT) domain for good energy-efficiency. Embedded memories and their leakage current can easily dominate the overall silicon area and the total power consumption, respectively. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. For the first time, this paper presents a gain-cell array which is fully functional in the sub-VT regime and achieves a data retention time that is more than 104 times higher than the access time. Monte Carlos simulations show that the 2 kb gain-cell array, implemented in a mature 0.18μm CMOS node and supplied with a sub-VT voltage of 400mV, exhibits robust write and read operations at 500 kHz under parametric variations and has over 99% availibilty for read and write access.

UR - https://www.scopus.com/pages/publications/84873542917

U2 - 10.1109/SubVT.2012.6404318

DO - 10.1109/SubVT.2012.6404318

M3 - منشور من مؤتمر

SN - 9781467315876

T3 - 2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012

BT - 2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012

T2 - 2012 IEEE Subthreshold Microelectronics Conference, SubVT 2012

Y2 - 9 October 2012 through 10 October 2012

ER -