TY - JOUR
T1 - A new binary phase in the tin monoselenide system
T2 - Chemical epitaxy of orthorhombic γ-SnSe thin films
AU - Koren, Bar
AU - Abutbul, Ran E.
AU - Ezersky, Vladimir
AU - Maman, Nitzan
AU - Golan, Yuval
N1 - Funding Information: We thank Dr Mark Baranov for supporting calculations using EXPO-2014 software and Dr Yelena Mirsky for expert assistance in XRD. This work was supported by the Israel Science Foundation, Grant #1760/18. REA is grateful to the Azrieli Foundation for the award of an Azrieli Fellowship. Publisher Copyright: © the Partner Organisations.
PY - 2021/7/7
Y1 - 2021/7/7
N2 - A new orthorhombic binary phase in the tin mono-selenide system, γ-SnSe, was deposited from solution onto an intermediate layer of PbS on GaAs substrates. Its structure is based on orthorhombic lead telluride (PbTe) which was reported to exist at high pressures, yet has never been observed in SnSe. The proposed model of γ-SnSe was experimentally determined using X-ray diffraction with lattice parameters a0 = 0.8332 nm, b0 = 0.4136 nm, c0 = 0.6115 nm, Rp = 5.96, and Rwp = 8.16. The films show heteroepitaxial relations with the underlying layer of PbS.
AB - A new orthorhombic binary phase in the tin mono-selenide system, γ-SnSe, was deposited from solution onto an intermediate layer of PbS on GaAs substrates. Its structure is based on orthorhombic lead telluride (PbTe) which was reported to exist at high pressures, yet has never been observed in SnSe. The proposed model of γ-SnSe was experimentally determined using X-ray diffraction with lattice parameters a0 = 0.8332 nm, b0 = 0.4136 nm, c0 = 0.6115 nm, Rp = 5.96, and Rwp = 8.16. The films show heteroepitaxial relations with the underlying layer of PbS.
UR - http://www.scopus.com/inward/record.url?scp=85108962467&partnerID=8YFLogxK
U2 - https://doi.org/10.1039/d1qm00410g
DO - https://doi.org/10.1039/d1qm00410g
M3 - Article
SN - 2052-1537
VL - 5
SP - 5004
EP - 5011
JO - Materials Chemistry Frontiers
JF - Materials Chemistry Frontiers
IS - 13
ER -