A new binary phase in the tin monoselenide system: Chemical epitaxy of orthorhombic γ-SnSe thin films

Bar Koren; Ran E. Abutbul; Vladimir Ezersky; Nitzan Maman; Yuval Golan

doi:10.1039/d1qm00410g

A new binary phase in the tin monoselenide system: Chemical epitaxy of orthorhombic γ-SnSe thin films

Bar Koren, Ran E. Abutbul, Vladimir Ezersky, Nitzan Maman, Yuval Golan

Ben-Gurion University of the Negev

Research output: Contribution to journal › Article › peer-review

Abstract

A new orthorhombic binary phase in the tin mono-selenide system, γ-SnSe, was deposited from solution onto an intermediate layer of PbS on GaAs substrates. Its structure is based on orthorhombic lead telluride (PbTe) which was reported to exist at high pressures, yet has never been observed in SnSe. The proposed model of γ-SnSe was experimentally determined using X-ray diffraction with lattice parameters a0 = 0.8332 nm, b0 = 0.4136 nm, c0 = 0.6115 nm, Rp = 5.96, and Rwp = 8.16. The films show heteroepitaxial relations with the underlying layer of PbS.

Original language	American English
Pages (from-to)	5004-5011
Number of pages	8
Journal	Materials Chemistry Frontiers
Volume	5
Issue number	13
DOIs	https://doi.org/10.1039/d1qm00410g
State	Published - 7 Jul 2021

All Science Journal Classification (ASJC) codes

Materials Chemistry
General Materials Science

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abstract = "A new orthorhombic binary phase in the tin mono-selenide system, γ-SnSe, was deposited from solution onto an intermediate layer of PbS on GaAs substrates. Its structure is based on orthorhombic lead telluride (PbTe) which was reported to exist at high pressures, yet has never been observed in SnSe. The proposed model of γ-SnSe was experimentally determined using X-ray diffraction with lattice parameters a0 = 0.8332 nm, b0 = 0.4136 nm, c0 = 0.6115 nm, Rp = 5.96, and Rwp = 8.16. The films show heteroepitaxial relations with the underlying layer of PbS.",

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AU - Ezersky, Vladimir

AU - Maman, Nitzan

AU - Golan, Yuval

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AB - A new orthorhombic binary phase in the tin mono-selenide system, γ-SnSe, was deposited from solution onto an intermediate layer of PbS on GaAs substrates. Its structure is based on orthorhombic lead telluride (PbTe) which was reported to exist at high pressures, yet has never been observed in SnSe. The proposed model of γ-SnSe was experimentally determined using X-ray diffraction with lattice parameters a0 = 0.8332 nm, b0 = 0.4136 nm, c0 = 0.6115 nm, Rp = 5.96, and Rwp = 8.16. The films show heteroepitaxial relations with the underlying layer of PbS.

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A new binary phase in the tin monoselenide system: Chemical epitaxy of orthorhombic γ-SnSe thin films

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