A new approach to modelling Kelvin probe force microscopy of hetero-structures in the dark and under illumination

Yong Huang, Alexandre Gheno, Alain Rolland, Laurent Pedesseau, Sylvain Vedraine, Olivier Durand, Johann Bouclé, James P. Connolly, Lioz Etgar, Jacky Even

Research output: Contribution to journalArticlepeer-review

Abstract

A numerical method is proposed to model Kelvin probe force microscopy of hetero-structures in the dark and under illumination. It is applied to FTO/TiO2 and FTO/TiO2/MAPbI3 structures. The presence of surface states on the top of the TiO2 layers are revealed by combining theoretical computation and experimental results. Basic features of Kelvin probe force microscopy under illumination, namely surface photovoltage, are simulated as well. The method paves the way toward further investigations of more complicated optoelectronic devices.

Original languageEnglish
Article number41
JournalOptical and Quantum Electronics
Volume50
Issue number1
DOIs
StatePublished - 1 Jan 2018

Keywords

  • Drift–diffusion
  • Halide perovskite
  • Hetero-structures
  • KPFM
  • SPV

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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