A method to improve reliability in a 65-nm SRAM PUF array

Yizhak Shifman; Avi Miller; Osnat Keren; Yoav Weizmann; Joseph Shor

doi:https://doi.org/10.1109/lssc.2018.2879216

A method to improve reliability in a 65-nm SRAM PUF array

Yizhak Shifman, Avi Miller, Osnat Keren, Yoav Weizmann, Joseph Shor

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

A modified weak SRAM physical unclonable function (PUF) is proposed which is much more reliable than prior-art SRAM PUFs. The proposed PUF was fabricated in TSMC 65-nm process. A novel preselection test was run on these PUF arrays and is shown to eliminate all of the unstable cells (20%-25%). This PUF can drastically reduce the need for error correction codes. In addition, the preselection test can be accomplished in one VDD/temperature corner, which reduces the testing cost of finding unstable bits across many such corners, as is done in the prior art.

Original language	English
Article number	8519616
Pages (from-to)	138-141
Number of pages	4
Journal	IEEE Solid-State Circuits Letters
Volume	1
Issue number	6
DOIs	https://doi.org/10.1109/lssc.2018.2879216
State	Published - 2018

Keywords

Physical unclonable function (PUF)
SRAM
preselection

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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https://doi.org/10.1109/lssc.2018.2879216

Cite this

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title = "A method to improve reliability in a 65-nm SRAM PUF array",

abstract = "A modified weak SRAM physical unclonable function (PUF) is proposed which is much more reliable than prior-art SRAM PUFs. The proposed PUF was fabricated in TSMC 65-nm process. A novel preselection test was run on these PUF arrays and is shown to eliminate all of the unstable cells (20%-25%). This PUF can drastically reduce the need for error correction codes. In addition, the preselection test can be accomplished in one VDD/temperature corner, which reduces the testing cost of finding unstable bits across many such corners, as is done in the prior art.",

keywords = "Physical unclonable function (PUF), SRAM, preselection",

author = "Yizhak Shifman and Avi Miller and Osnat Keren and Yoav Weizmann and Joseph Shor",

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AU - Miller, Avi

AU - Keren, Osnat

AU - Weizmann, Yoav

AU - Shor, Joseph

PY - 2018

Y1 - 2018

N2 - A modified weak SRAM physical unclonable function (PUF) is proposed which is much more reliable than prior-art SRAM PUFs. The proposed PUF was fabricated in TSMC 65-nm process. A novel preselection test was run on these PUF arrays and is shown to eliminate all of the unstable cells (20%-25%). This PUF can drastically reduce the need for error correction codes. In addition, the preselection test can be accomplished in one VDD/temperature corner, which reduces the testing cost of finding unstable bits across many such corners, as is done in the prior art.

AB - A modified weak SRAM physical unclonable function (PUF) is proposed which is much more reliable than prior-art SRAM PUFs. The proposed PUF was fabricated in TSMC 65-nm process. A novel preselection test was run on these PUF arrays and is shown to eliminate all of the unstable cells (20%-25%). This PUF can drastically reduce the need for error correction codes. In addition, the preselection test can be accomplished in one VDD/temperature corner, which reduces the testing cost of finding unstable bits across many such corners, as is done in the prior art.

KW - Physical unclonable function (PUF)

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M3 - مقالة

SN - 2573-9603

VL - 1

SP - 138

EP - 141

JO - IEEE Solid-State Circuits Letters

JF - IEEE Solid-State Circuits Letters

IS - 6

M1 - 8519616

ER -

A method to improve reliability in a 65-nm SRAM PUF array

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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