A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

E. N. Jin; L. Kornblum; D. P. Kumah; K. Zou; C. C. Broadbridge; J. H. Ngai; C. H. Ahn; F. J. Walker

doi:10.1063/1.4902433

A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

E. N. Jin, L. Kornblum, D. P. Kumah, K. Zou, C. C. Broadbridge, J. H. Ngai, C. H. Ahn, F. J. Walker

Research output: Contribution to journal › Article › peer-review

Abstract

We present the growth and characterization of layered heterostructures comprised of LaTiO₃ and SrTiO₃ epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO₃/SrTiO₃ interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 10¹⁴ cm^-2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

Original language	English
Article number	116109
Journal	APL Materials
Volume	2
Issue number	11
DOIs	https://doi.org/10.1063/1.4902433
State	Published - 1 Nov 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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title = "A high density two-dimensional electron gas in an oxide heterostructure on Si (001)",

abstract = "We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm-2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.",

author = "Jin, \{E. N.\} and L. Kornblum and Kumah, \{D. P.\} and K. Zou and Broadbridge, \{C. C.\} and Ngai, \{J. H.\} and Ahn, \{C. H.\} and Walker, \{F. J.\}",

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doi = "10.1063/1.4902433",

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T1 - A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

AU - Jin, E. N.

AU - Kornblum, L.

AU - Kumah, D. P.

AU - Zou, K.

AU - Broadbridge, C. C.

AU - Ngai, J. H.

AU - Ahn, C. H.

AU - Walker, F. J.

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm-2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

AB - We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm-2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.

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U2 - 10.1063/1.4902433

DO - 10.1063/1.4902433

M3 - مقالة

SN - 2166-532X

VL - 2

JO - APL Materials

JF - APL Materials

IS - 11

M1 - 116109

ER -

A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

Abstract

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