A Fully Integrated 5510-μm2 Process Monitor and Threshold Voltage Extractor Circuit in 28 nm

Ido Shpernat; Asaf Feldman; Joseph Shor

doi:10.1109/lssc.2024.3457768

A Fully Integrated 5510-μm² Process Monitor and Threshold Voltage Extractor Circuit in 28 nm

Ido Shpernat, Asaf Feldman, Joseph Shor

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

A new architecture of an on-die process monitor circuit is demonstrated in 28 nm. The proposed circuit can extract the threshold voltage, V_TH and random mismatch of a transistor using multiple extraction methods, including the second derivative method. A sigma-delta modulator analog-to-digital converter samples the output to enable on-die processing of the results. A V_DS voltage control loop enables V_TH extraction in both the linear and saturation regions of the device.

Original language	English
Pages (from-to)	279-282
Number of pages	4
Journal	IEEE Solid-State Circuits Letters
Volume	7
DOIs	https://doi.org/10.1109/lssc.2024.3457768
State	Published - 2024

Keywords

Process monitor (PM)
sensors
switched capacitor
threshold voltage extractor

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/lssc.2024.3457768

Cite this

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title = "A Fully Integrated 5510-μm2 Process Monitor and Threshold Voltage Extractor Circuit in 28 nm",

abstract = "A new architecture of an on-die process monitor circuit is demonstrated in 28 nm. The proposed circuit can extract the threshold voltage, VTH and random mismatch of a transistor using multiple extraction methods, including the second derivative method. A sigma-delta modulator analog-to-digital converter samples the output to enable on-die processing of the results. A VDS voltage control loop enables VTH extraction in both the linear and saturation regions of the device.",

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author = "Ido Shpernat and Asaf Feldman and Joseph Shor",

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AB - A new architecture of an on-die process monitor circuit is demonstrated in 28 nm. The proposed circuit can extract the threshold voltage, VTH and random mismatch of a transistor using multiple extraction methods, including the second derivative method. A sigma-delta modulator analog-to-digital converter samples the output to enable on-die processing of the results. A VDS voltage control loop enables VTH extraction in both the linear and saturation regions of the device.

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