A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation

Afik Vaknin; Ortal Yona; Adam Teman

doi:10.1109/S3S.2013.6716565

A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation

Afik Vaknin, Ortal Yona, Adam Teman

Department of Electrical & Computer Engineering

Ben-Gurion University of the Negev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	American English
Title of host publication	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
DOIs	https://doi.org/10.1109/S3S.2013.6716565
State	Published - 1 Jan 2013
Event	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States Duration: 7 Oct 2013 → 10 Oct 2013

Publication series

Name	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Conference

Conference	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Country/Territory	United States
City	Monterey, CA
Period	7/10/13 → 10/10/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/S3S.2013.6716565

Cite this

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title = "A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation",

author = "Afik Vaknin and Ortal Yona and Adam Teman",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/S3S.2013.6716565",

language = "American English",

isbn = "9781479913602",

series = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

booktitle = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

note = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 ; Conference date: 07-10-2013 Through 10-10-2013",

}

Vaknin, A, Yona, O & Teman, A 2013, A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation. in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013., 6716565, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Monterey, CA, United States, 7/10/13. https://doi.org/10.1109/S3S.2013.6716565

A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation. / Vaknin, Afik; Yona, Ortal; Teman, Adam.
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. 2013. 6716565 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation

AU - Vaknin, Afik

AU - Yona, Ortal

AU - Teman, Adam

PY - 2013/1/1

Y1 - 2013/1/1

UR - http://www.scopus.com/inward/record.url?scp=84897678060&partnerID=8YFLogxK

U2 - 10.1109/S3S.2013.6716565

DO - 10.1109/S3S.2013.6716565

M3 - Conference contribution

SN - 9781479913602

T3 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

BT - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

T2 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Y2 - 7 October 2013 through 10 October 2013

ER -

A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation

Publication series

Conference

All Science Journal Classification (ASJC) codes

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