A degenerately doped In0.53Ga0.47As bipolar junction transistor

E. Yalon; D. Cohen Elias; A. Gavrilov; S. Cohen; R. Halevy; D. Ritter

doi:10.1109/LED.2010.2084557

A degenerately doped In_0.53Ga_0.47As bipolar junction transistor

E. Yalon, D. Cohen Elias, A. Gavrilov, S. Cohen, R. Halevy, D. Ritter

Technion - Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 Ωċμm².

Original language	English
Article number	5629435
Pages (from-to)	21-23
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	1
DOIs	https://doi.org/10.1109/LED.2010.2084557
State	Published - Jan 2011

Keywords

Bipolar junction transistor (BJT)
heterojunction bipolar transistor (HBT)

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2084557

Cite this

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title = "A degenerately doped In0.53Ga0.47As bipolar junction transistor",

abstract = "An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 Ωċμm2.",

keywords = "Bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT)",

author = "E. Yalon and Elias, \{D. Cohen\} and A. Gavrilov and S. Cohen and R. Halevy and D. Ritter",

note = "Funding Information: Manuscript received August 8, 2010; revised September 24, 2010; accepted September 25, 2010. Date of publication November 11, 2010; date of current version December 27, 2010. This work was supported in part by the Technion Russell Berrie Nanotechnology Institute and in part by the Israel Science Foundation under Grant 1041/06. The review of this letter was arranged by Editor J. A. del Alamo.",

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doi = "10.1109/LED.2010.2084557",

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T1 - A degenerately doped In0.53Ga0.47As bipolar junction transistor

AU - Yalon, E.

AU - Elias, D. Cohen

AU - Gavrilov, A.

AU - Cohen, S.

AU - Halevy, R.

AU - Ritter, D.

N1 - Funding Information: Manuscript received August 8, 2010; revised September 24, 2010; accepted September 25, 2010. Date of publication November 11, 2010; date of current version December 27, 2010. This work was supported in part by the Technion Russell Berrie Nanotechnology Institute and in part by the Israel Science Foundation under Grant 1041/06. The review of this letter was arranged by Editor J. A. del Alamo.

PY - 2011/1

Y1 - 2011/1

N2 - An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 Ωċμm2.

AB - An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 Ωċμm2.

KW - Bipolar junction transistor (BJT)

KW - heterojunction bipolar transistor (HBT)

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DO - 10.1109/LED.2010.2084557

M3 - مقالة

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VL - 32

SP - 21

EP - 23

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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