Abstract
We present a constraint-coding scheme to correct large numbers of asymmetric magnitude-1 errors in multi-level non-volatile memories. The scheme is shown to deliver better correction capability compared to known alternatives, while admitting low-complexity of decoding. Another advantage of this scheme is the flexibility to vary the code parameters without significant modifications. This is especially attractive for dealing with manufacturing variability and wear-induced device degradation.
| Original language | American English |
|---|---|
| Title of host publication | 6th Annual Non-Volatile Memories Workshop 2015 |
| Subtitle of host publication | NVMW 2015 |
| State | Published - 2015 |
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