A Bootstrapped 250-nm GaN MMIC N-Path Filter With a 31 dBm In-Band P1dB

This work presents a second-order parallel N-path bandpass filter implemented in 250-nm depletion-mode GaN process leveraging an integrated baseband bootstrapping technique for high in-band linearity performance. The bootstrap circuit improves in-band compression by 20 dB by preventing the opening of the gate parasitic diode of the GaN switch. The filter achieves in-band P1dB of 31 dBm for a 26 MHz bandwidth around 1 GHz center frequency along with 2 dB insertion loss between 0.3-1.8 GHz with an out-of-band rejection of 16 dB. The chip occupies an area of 9.2 mm2 and consumes 4.9 Watt.