A 700-µm2, Ring-Oscillator-Based Thermal Sensor in 16-nm FinFET

Yosef Lempel; Rinat Breuer; Joseph Shor

doi:10.1109/TVLSI.2021.3137338

A 700-µm², Ring-Oscillator-Based Thermal Sensor in 16-nm FinFET

Yosef Lempel, Rinat Breuer, Joseph Shor

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.

Original language	English
Pages (from-to)	248-252
Number of pages	5
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/TVLSI.2021.3137338
State	Published - 1 Feb 2022

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CMOS
microprocessors
ring oscillator
thermal sensor

All Science Journal Classification (ASJC) codes

Software
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/TVLSI.2021.3137338

Cite this

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title = "A 700-µm2, Ring-Oscillator-Based Thermal Sensor in 16-nm FinFET",

abstract = "Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.",

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AU - Breuer, Rinat

AU - Shor, Joseph

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N2 - Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.

AB - Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.

KW - CMOS

KW - microprocessors

KW - ring oscillator

KW - thermal sensor

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DO - 10.1109/TVLSI.2021.3137338

M3 - مقالة

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JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

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