A 6 × 6 Stitched Array of 320 GHz CMOS Active Pixel Detectors

This article details the design and characterization of a 6x6 detector array fabricated with 65 nm complementary metal-oxide-semiconductor (CMOS), where the pixels in the array are stitched together with wirebonds as opposed to monolithic integration. Each pixel contains an on-chip loop antenna and baseband chopper amplifier with 32 dB gain. The design focuses on maintaining detector performance under array scaling and baseband integration. Measurement results of the chopper breakout, standalone pixel, and array are presented, where the standalone pixel achieves an R_V (voltage responsivity) of 120 kV/W and record noise-equivalent power of 6 pW/√Hz with the baseband amplifier; and the mean array R_V is 80 kV/W. The chip pixel area is 950 μm × 600 μm.