@inproceedings{3551f94c6b2641eb99aefaa246e7b2ee,
title = "A 4T GC-eDRAM Bitcell with Differential Readout Mechanism For High Performance Applications",
abstract = "Gain-cell embedded DRAM (GC-eDRAM) is a dense, low power option for embedded memory implementation, supporting low supply voltages. However, due to its structure, the readout scheme is slow and requires a high precision external reference voltage to improve performance. In this work, we propose a novel bitcell featuring a differential readout mechanism for high frequency operation without the need for an external voltage supply. A 16 kbit memory macro was implemented in 65nm CMOS bulk technology offering up to 3x improvement in access time compared to standard GC-eDRAM solutions and similar read time to SRAM bitcells, while providing up-to 30\% reduction in bitcell area compared to standard SRAM solution.",
keywords = "GC-eDRAM, Low Power, differential readout, embedded Memory, gain cells, logic-compatible eDRAM",
author = "Roman Golman and Avinoam Segev and Adam Teman",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 19th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2024 ; Conference date: 09-06-2024 Through 12-06-2024",
year = "2024",
month = jan,
day = "1",
doi = "10.1109/prime61930.2024.10559672",
language = "الإنجليزيّة",
series = "2024 19th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 19th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2024",
address = "الولايات المتّحدة",
}