A 210-227 GHz transmitter with integrated on-chip antenna in 90 nm CMOS technology

Bassam Khamaisi; Samuel Jameson; Eran Socher

doi:10.1109/TTHZ.2012.2236836

A 210-227 GHz transmitter with integrated on-chip antenna in 90 nm CMOS technology

Bassam Khamaisi, Samuel Jameson, Eran Socher

School of Electrical Engineering

Tel Aviv University

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a transmitter operating in the 210-227 GHz in 90 nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model is presented for the operation and the design of the circuit, which compares well with simulated and measured results. The transmitter achieves an EIRP of + 1.8dBm at 217 GHz and directivity of about +10dBi. The circuit consumes 128 mW of DC power and an area of 0.53².

Original language	English
Article number	6462007
Pages (from-to)	141-150
Number of pages	10
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	3
Issue number	2
DOIs	https://doi.org/10.1109/TTHZ.2012.2236836
State	Published - 2013

Keywords

CMOS
THz imaging
dipole antenna
millimeter-wave circuits
on-chip antenna
transmitter
voltage-controlled oscillator

All Science Journal Classification (ASJC) codes

Radiation
Electrical and Electronic Engineering

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10.1109/TTHZ.2012.2236836

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title = "A 210-227 GHz transmitter with integrated on-chip antenna in 90 nm CMOS technology",

abstract = "This paper presents a transmitter operating in the 210-227 GHz in 90 nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model is presented for the operation and the design of the circuit, which compares well with simulated and measured results. The transmitter achieves an EIRP of + 1.8dBm at 217 GHz and directivity of about +10dBi. The circuit consumes 128 mW of DC power and an area of 0.532.",

keywords = "CMOS, THz imaging, dipole antenna, millimeter-wave circuits, on-chip antenna, transmitter, voltage-controlled oscillator",

author = "Bassam Khamaisi and Samuel Jameson and Eran Socher",

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language = "الإنجليزيّة",

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AU - Khamaisi, Bassam

AU - Jameson, Samuel

AU - Socher, Eran

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N2 - This paper presents a transmitter operating in the 210-227 GHz in 90 nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model is presented for the operation and the design of the circuit, which compares well with simulated and measured results. The transmitter achieves an EIRP of + 1.8dBm at 217 GHz and directivity of about +10dBi. The circuit consumes 128 mW of DC power and an area of 0.532.

AB - This paper presents a transmitter operating in the 210-227 GHz in 90 nm CMOS, based on a Colpitts VCO. The third harmonic of the generated VCO fundamental signal is coupled to an on-chip dipole antenna. A simplified model is presented for the operation and the design of the circuit, which compares well with simulated and measured results. The transmitter achieves an EIRP of + 1.8dBm at 217 GHz and directivity of about +10dBi. The circuit consumes 128 mW of DC power and an area of 0.532.

KW - CMOS

KW - THz imaging

KW - dipole antenna

KW - millimeter-wave circuits

KW - on-chip antenna

KW - transmitter

KW - voltage-controlled oscillator

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DO - 10.1109/TTHZ.2012.2236836

M3 - مقالة

SN - 2156-342X

VL - 3

SP - 141

EP - 150

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 2

M1 - 6462007

ER -

A 210-227 GHz transmitter with integrated on-chip antenna in 90 nm CMOS technology

Abstract

Keywords

All Science Journal Classification (ASJC) codes

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