TY - GEN
T1 - A 14.3pW sub-threshold 2T gain-cell eDRAM for ultra-low power IoT applications in 28nm FD-SOI
AU - Giterman, Robert
AU - Teman, Adam
AU - Fish, Alexander
N1 - Publisher Copyright: © 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - Internet of Things (IoT) applications, such as biomedical sensing, often require on-chip embedded memories, which dominate both the silicon area and power of these applications [1, 2]. To adhere to the ultra-low power (ULP) requirements of IoT applications, supply voltage ( VDD)scaling down to the sub-threshold voltage ( VT)region can be used to significantly reduce both the static and dynamic power consumption of these applications. However, embedded memories, typically implemented with 6T SRAM macros, suffer from decreased noise margins and become unreliable at near-VTsupply voltages [2-4].
AB - Internet of Things (IoT) applications, such as biomedical sensing, often require on-chip embedded memories, which dominate both the silicon area and power of these applications [1, 2]. To adhere to the ultra-low power (ULP) requirements of IoT applications, supply voltage ( VDD)scaling down to the sub-threshold voltage ( VT)region can be used to significantly reduce both the static and dynamic power consumption of these applications. However, embedded memories, typically implemented with 6T SRAM macros, suffer from decreased noise margins and become unreliable at near-VTsupply voltages [2-4].
UR - http://www.scopus.com/inward/record.url?scp=85063130649&partnerID=8YFLogxK
U2 - https://doi.org/10.1109/S3S.2018.8640130
DO - https://doi.org/10.1109/S3S.2018.8640130
M3 - منشور من مؤتمر
T3 - 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
BT - 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
Y2 - 15 October 2018 through 18 October 2018
ER -