A 0.15 um Depletion Mode GaN Bootstrapped N-path Filter with 23dBm Inband Blocker Handling

Netanel Desta, Emanuel Cohen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper suggests linearity improvement of N-path filters, using a Depletion mode (D-mode) 0.15um GaN process. GaN has a high breakdown voltage which can support large powers. By simulating one port 4-path filter with 1 GHz LO frequency and 1.001 GHz RF input frequency (1MHz baseband), integrated with BB node bootstrap circuit based on LO and BB combination, we demonstrate a high-Q filter with 14MHz bandwidth and 14dB rejection ratio for the inband (IB) blocker of 23dBm. We also show a high linearity performance by achieving IB P1dB of 26dBm, which is 14dB higher than the same N-path without bootstrap.

Original languageEnglish
Title of host publication2022 Asia-Pacific Microwave Conference, APMC 2022 - Proceedings
Pages746-748
Number of pages3
ISBN (Electronic)9784902339567
StatePublished - 2022
Event2022 Asia-Pacific Microwave Conference, APMC 2022 - Yokohama, Japan
Duration: 29 Nov 20222 Dec 2022

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2022-November

Conference

Conference2022 Asia-Pacific Microwave Conference, APMC 2022
Country/TerritoryJapan
CityYokohama
Period29/11/222/12/22

Keywords

  • Gallium nitride
  • N-path filters
  • linearity

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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