0.5W X-band SiGe PA with integrated double-tuned transformers

Eyal Harir; Eran Socher

doi:10.1109/MWSYM.2013.6697396

0.5W X-band SiGe PA with integrated double-tuned transformers

Eyal Harir, Eran Socher

School of Electrical Engineering

Tel Aviv University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Power amplifier (PA) for a next generation X band T/R-modules in active array antennas is realized using low cost, high yield and high integration 0.18μm SiGe-HBT Technology. A single stage class AB cascode PA using only highspeed HBTs and double tuned transformers at the input and output matching networks with excellent performances has been designed. The PA achieve peak output power of 27dBm and maximum 36 % power added efficiency (PAE). The core RF size is 0.85mm × 0.56mm without pads and low frequency decoupling capacitors exhibiting an output power density of 1.0 W/mm². To our knowledge, those values are the highest in SiGe-HBT power amplifiers.

Original language	English
Title of host publication	2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs	https://doi.org/10.1109/MWSYM.2013.6697396
State	Published - 2013
Event	2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States Duration: 2 Jun 2013 → 7 Jun 2013

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest

Conference

Conference	2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/Territory	United States
City	Seattle, WA
Period	2/06/13 → 7/06/13

Keywords

Cascode
Heterojunction bipolar transistor (HBT)
Power amplifier (PA)
Silicon germanium (SiGe)

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2013.6697396

Cite this

@inproceedings{ec6a604964af4844a5b622ae9c3bf43a,

title = "0.5W X-band SiGe PA with integrated double-tuned transformers",

abstract = "Power amplifier (PA) for a next generation X band T/R-modules in active array antennas is realized using low cost, high yield and high integration 0.18μm SiGe-HBT Technology. A single stage class AB cascode PA using only highspeed HBTs and double tuned transformers at the input and output matching networks with excellent performances has been designed. The PA achieve peak output power of 27dBm and maximum 36 \% power added efficiency (PAE). The core RF size is 0.85mm × 0.56mm without pads and low frequency decoupling capacitors exhibiting an output power density of 1.0 W/mm2. To our knowledge, those values are the highest in SiGe-HBT power amplifiers.",

keywords = "Cascode, Heterojunction bipolar transistor (HBT), Power amplifier (PA), Silicon germanium (SiGe)",

author = "Eyal Harir and Eran Socher",

year = "2013",

doi = "10.1109/MWSYM.2013.6697396",

language = "الإنجليزيّة",

isbn = "9781467361767",

series = "IEEE MTT-S International Microwave Symposium Digest",

booktitle = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013",

note = "2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 ; Conference date: 02-06-2013 Through 07-06-2013",

}

Harir, E & Socher, E 2013, 0.5W X-band SiGe PA with integrated double-tuned transformers. in 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013., 6697396, IEEE MTT-S International Microwave Symposium Digest, 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013, Seattle, WA, United States, 2/06/13. https://doi.org/10.1109/MWSYM.2013.6697396

TY - GEN

T1 - 0.5W X-band SiGe PA with integrated double-tuned transformers

AU - Harir, Eyal

AU - Socher, Eran

PY - 2013

Y1 - 2013

N2 - Power amplifier (PA) for a next generation X band T/R-modules in active array antennas is realized using low cost, high yield and high integration 0.18μm SiGe-HBT Technology. A single stage class AB cascode PA using only highspeed HBTs and double tuned transformers at the input and output matching networks with excellent performances has been designed. The PA achieve peak output power of 27dBm and maximum 36 % power added efficiency (PAE). The core RF size is 0.85mm × 0.56mm without pads and low frequency decoupling capacitors exhibiting an output power density of 1.0 W/mm2. To our knowledge, those values are the highest in SiGe-HBT power amplifiers.

AB - Power amplifier (PA) for a next generation X band T/R-modules in active array antennas is realized using low cost, high yield and high integration 0.18μm SiGe-HBT Technology. A single stage class AB cascode PA using only highspeed HBTs and double tuned transformers at the input and output matching networks with excellent performances has been designed. The PA achieve peak output power of 27dBm and maximum 36 % power added efficiency (PAE). The core RF size is 0.85mm × 0.56mm without pads and low frequency decoupling capacitors exhibiting an output power density of 1.0 W/mm2. To our knowledge, those values are the highest in SiGe-HBT power amplifiers.

KW - Cascode

KW - Heterojunction bipolar transistor (HBT)

KW - Power amplifier (PA)

KW - Silicon germanium (SiGe)

UR - http://www.scopus.com/inward/record.url?scp=84893284049&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2013.6697396

DO - 10.1109/MWSYM.2013.6697396

M3 - منشور من مؤتمر

SN - 9781467361767

T3 - IEEE MTT-S International Microwave Symposium Digest

BT - 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013

T2 - 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013

Y2 - 2 June 2013 through 7 June 2013

ER -

0.5W X-band SiGe PA with integrated double-tuned transformers

Abstract

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Conference

Keywords

All Science Journal Classification (ASJC) codes

Access to Document

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