Material Science
Graphene
100%
Heterojunction
57%
Ferroelectric Material
54%
Monolayer
54%
Two-Dimensional Material
46%
Nanowire
36%
Atomic Force Microscopy
31%
Surface (Surface Science)
30%
Ferroelectricity
30%
Doping (Additives)
26%
Self Assembled Monolayer
25%
Photovoltaics
21%
Silicon
18%
Transition Metal Dichalcogenide
16%
Photoluminescence
16%
Layered Material
16%
Contact Area
15%
Transistor
15%
Photosensor
14%
Electrical Resistivity
13%
Anisotropy
13%
Electronic Property
11%
Indium
10%
Field Effect Transistor
10%
Electronic Circuit
9%
Raman Spectroscopy
9%
Sintering
8%
Mechanical Stability
8%
Waveguide
8%
Electrospinning
8%
Lattice Constant
8%
Graphene Oxide
8%
Functional Material
8%
Permittivity
8%
Film Deposition
8%
Anisotropic Medium
8%
Scanning Probe Microscopy
8%
Multiplexing
8%
Photonic Crystal
8%
Quasicrystal
8%
Device Fabrication
8%
Surface Tension
8%
Photovoltaic Effect
8%
Polypropylene
8%
Refractory Material
7%
Scanning Tunneling Microscopy
7%
Density
7%
Superlattice
6%
Optical Device
5%
Tungsten
5%
Engineering
Two Dimensional
35%
Interlayer
31%
Graphene
31%
Photovoltaics
21%
Nanowire
17%
Anisotropic
17%
Mesoscale
17%
Optoelectronics
17%
Rotational
17%
Conductive Atomic Force Microscopy
15%
Room Temperature
15%
Nonvolatile Memory
13%
Electronic State
13%
Molybdenum Disulfide
13%
Contact Area
11%
Metal Contact
11%
Dopants
10%
Photocurrent
10%
Gold Wire
8%
Pn Junction
8%
Graphene Oxide
8%
Sintering
8%
Highly Oriented Pyrolytic Graphite
8%
Quantum State
8%
Scale Measurement
8%
Bistables
8%
Photonics
8%
Situ Observation
8%
Heterojunctions
8%
Electrospinning
8%
Layer Graphene
8%
Building Block
8%
Actuation
8%
Heterostructures
8%
Waveguide
8%
Friction Force
8%
Tension Force
8%
Nanoelectronics
8%
Square Meter
8%
Mechanical Stability
8%
Scanning Probe Microscopy
8%
Line Tension
8%
Field-Effect Transistor
8%
Effect Transistor
8%
Laser Power
8%
Monolayer
8%
Photovoltaic Effect
8%
Penetration Depth
6%
Electrical Conductivity
6%
Nanoscale
6%
Keyphrases
Conductive Atomic Force Microscopy (C-AFM)
25%
Molybdenite
17%
In2Se3
17%
Superlubricity
17%
Two Dimensional
16%
Sliding Force
14%
Heterostructure
12%
Resistivity
11%
Silicon Nanowires (SiNWs)
11%
Nanowires
11%
Thermally Activated Processes
11%
Metal Contact
11%
Transition Metal Dichalcogenide Monolayer
11%
Room Temperature
11%
Edge States
10%
Schottky Junction
8%
Memory Application
8%
Spreading Resistance
8%
Stacking Faults
8%
Graphene
8%
Conductance Anisotropy
8%
Organic Films
8%
Heterointerface
8%
Defective Photonic Crystal
8%
Two-dimensional (2D) Materials
8%
Waveguide Integration
8%
Nanoelectronics
8%
Depletion Region
8%
Mesostructure
8%
Photodetection
8%
Multibit Nonvolatile Memory
8%
Nonvolatile Logic
8%
In Situ Observation
8%
Non-volatile Memory
8%
Surface Doping
8%
Graphene Oxide
8%
In-plane Ferroelectricity
8%
Alkynyl Group
8%
Asymmetric Heterostructure
8%
Spin-valley
8%
Optical Random Access Memory
8%
Field-effect Device
8%
Rashba
8%
Ferroelectric Field Effect
8%
Synaptic Response
8%
High-quality Graphene
8%
Highly Oriented Pyrolytic Graphite
8%
Van Der Waals Materials
8%
Multilayer MoS2
8%
Langmuir-Blodgett
8%
