Replenish and relax: Explaining logarithmic annealing in ion-implanted c-Si

Laurent Karim Béland, Yonathan Anahory, Dries Smeets, Matthieu Guihard, Peter Brommer, Jean François Joly, Jean Christophe Pothier, Laurent J. Lewis, Normand Mousseau, François Schiettekatte

نتاج البحث: نشر في مجلةمقالةمراجعة النظراء

ملخص

We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of disordered systems, with heat-release measurements. The microscopic mechanism associated with this logarithmic relaxation can be described as a two-step replenish and relax process. As the system relaxes, it reaches deeper energy states with logarithmically growing barriers that need to be unlocked to replenish the heat-releasing events leading to lower-energy configurations.

اللغة الأصليةإنجليزيّة أمريكيّة
رقم المقال105502
دوريةPhysical Review Letters
مستوى الصوت111
رقم الإصدار10
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 4 سبتمبر 2013
منشور خارجيًانعم

All Science Journal Classification (ASJC) codes

  • !!General Physics and Astronomy

بصمة

أدرس بدقة موضوعات البحث “Replenish and relax: Explaining logarithmic annealing in ion-implanted c-Si'. فهما يشكلان معًا بصمة فريدة.

قم بذكر هذا